Fine Source/Drain Electrodes With Low-Roughness Organic Interfaces
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Solution Overview
Problem
Existing methods for forming electrodes on organic semiconductor devices are prone to damage, particularly due to thermal issues and the use of elastomers that expand and contract with temperature, making it difficult to create fine, practical integrated circuits.
Innovation Solution
The development of electrodes with a channel length of 200 μm or less, surface roughness of 2 nm or less, and a protective film composed of an insulating polymer with a glass transition point of 80° C. or more, attached by electrostatic force, which helps in reducing damage and enhancing the stability of the organic semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vacuum deposition and photolithography are used to form electrodes on organic semiconductor layer, then electrode patterning is achieved, but thermal damage and chemical damage to the organic semiconductor layer occur
Solution Approach 1:
A release layer is introduced as an intermediary between the substrate and the organic semiconductor layer. This release layer allows electrodes to be formed on the release layer rather than directly on the organic semiconductor layer, thereby preventing thermal and chemical damage while still enabling precise electrode patterning through vacuum deposition and photolithography processes.
Solution Approach 2:
The structure is segmented into distinct layers: substrate, release layer, organic semiconductor layer, and electrodes. The release layer acts as a separate functional layer that decouples the electrode formation process from the organic semiconductor layer, allowing independent optimization of each layer's function and protecting the organic semiconductor from processing damage.
2Object-affected harmful factors
If elastomer is used to form electrode patterns, then damage to organic semiconductor layer is reduced, but shrinkage and time-dependent changes prevent fine electrode formation
Solution Approach 1:
The release layer serves as a stable intermediary surface that replaces the elastomer. Unlike elastomers that shrink and change over time, the release layer provides a dimensionally stable substrate for electrode formation, enabling fine electrode patterns to be created and maintained without the time-dependent degradation issues associated with elastomers.
Solution Approach 2:
The invention changes the fundamental parameter of substrate stability by replacing the elastomeric material with a non-elastomeric release layer. This parameter change eliminates the shrinkage and time-dependent dimensional changes inherent to elastomers, enabling precise and stable fine electrode formation suitable for practical integrated circuits.
3Productivity
If fine electrodes with channel length of 200 μm or less are formed, then integrated circuit functionality is achieved, but electrode surface roughness must be controlled to prevent organic semiconductor damage
Solution Approach 1:
The release layer acts as a mediator that enables the formation of fine electrodes with controlled surface roughness. By providing a stable, non-elastomeric surface, the release layer allows precise control of electrode geometry and surface quality, achieving the required surface roughness specifications for fine electrodes while maintaining integrated circuit functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for the creation of fine electrodes that are less susceptible to change over time, enabling the manufacturing of practical integrated circuits without damaging the organic semiconductor layer, thereby improving the long-term stability and performance of organic semiconductor devices.
Implementation Method 1
a protective film, wherein the protective film is composed of an insulating polymer having a thickness of 1 μm or less and a glass transition point of 80° C. or more, attached to surfaces opposite to the surfaces of the electrodes in the each set by electrostatic force
Data Source
AI summary
The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.