FinFET Amorphous Layer Height Control
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Solution Overview
Problem
Existing FinFET devices face challenges in achieving uniform height variation of source and drain epitaxial structures, with the center region often being higher than the edge region, leading to manufacturing inefficiencies and performance issues.
Innovation Solution
A manufacturing method for FinFETs involving amorphous implantation to form a layer on the fin structure, followed by trench formation and selective epitaxial growth of an alloy with a high concentration center region and low concentration cap region, where the amorphous layer restricts further growth of the high concentration region, ensuring uniform height of source and drain epitaxial structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective epitaxial growth is performed to grow alloy in trenches, then the source and drain regions are formed, but the center region grows higher than the edge region causing height variation
Solution Approach 1:
An amorphous layer is formed on the fin structure surface before the selective epitaxial growth of the alloy. This preliminary amorphous layer acts as a growth barrier that prevents the alloy from growing above a certain height, thereby controlling the height of the source and drain epitaxial structures and reducing the height variation between center and edge regions of the wafer.
2Manufacturing precision
If the amorphous layer is formed to restrict alloy growth, then height uniformity is improved, but the device structure becomes more complex
Solution Approach 1:
The amorphous layer is formed by changing the physical state of the deposited material from crystalline to amorphous phase. This parameter change in material structure allows the layer to effectively restrict the epitaxial growth of the alloy, providing height control without requiring complex multi-layer structures or additional processing equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method achieves consistent height of source and drain epitaxial structures across the wafer, improving product yield and device performance by preventing the high concentration region from growing above the amorphous layer, thus reducing height variation.
Implementation Method 1
growing an alloy in the trench; the amorphous layer restricts further growth of the high concentration region
Data Source
AI summary
The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the plurality of trenches; and an amorphous layer on a surface of the fin structure exposed by the gate structure and disposed in-between the gate structure and the alloy. The invention also provides a manufacturing method of a fin-shaped field effect transistor (FinFET).