FinFET Fin Structure With Silicon Cap Width Protection
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Solution Overview
Problem
Existing FinFET devices and fabrication methods face challenges in precisely controlling the width of the fin structure, leading to potential mechanical integrity issues and carrier mobility degradation during the formation of the gate dielectric layer.
Innovation Solution
The method involves forming a cap layer over the fin structure before growing the gate dielectric layer, which protects the fin structure and allows for precise control of its width, thereby preventing consumption during gate dielectric formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the fin structure width is not precisely controlled during gate dielectric formation, then the fabrication process is simpler, but mechanical integrity issues and carrier mobility degradation occur
Solution Approach 1:
A cap layer is formed over the fin structure before the gate dielectric layer is deposited. This preliminary action protects the fin structure during subsequent processing steps, enabling precise width control without compromising mechanical integrity or carrier mobility.
2Reliability
If the fin structure is consumed during gate dielectric formation, then the fabrication process is simpler, but carrier mobility degrades
Solution Approach 1:
The cap layer serves as an intermediary protective layer between the fin structure and the gate dielectric formation process. It prevents direct consumption of the fin structure while allowing the gate dielectric to be formed, thereby maintaining carrier mobility without oversimplifying the process.
3Strength
If no protection is provided during gate dielectric formation, then the fabrication process is simpler, but mechanical integrity is compromised
Solution Approach 1:
The cap layer is formed in advance before gate dielectric deposition, providing preliminary protection to the fin structure. This maintains mechanical integrity during the fabrication process while adding only one additional step to the工艺流程.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures the mechanical integrity of the fin structure and maintains carrier mobility, enhancing the overall performance and reliability of the FinFET device.
Implementation Method 1
depositing a silicon cap layer over the fin structure... growing an oxide layer over the silicon cap layer... The silicon cap layer is thinned after growing an oxide layer over the silicon cap layer
Data Source
AI summary
A fin field effect transistor device structure includes a fin structure formed over a substrate. The structure also includes a liner layer and an isolation structure surrounding the fin structure. The structure also includes a gate dielectric layer formed over the fin structure and the isolation structure. The structure also includes a gate structure formed over the gate dielectric layer. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The fin structure includes a protruding portion laterally extending over the liner layer.