FinFET Carbon Protection Layer for Fin Reliability
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable fin-like field effect transistors (FinFETs) due to decreasing feature sizes, which complicates the fabrication process and affects the performance and reliability of semiconductor devices.
Innovation Solution
A method for forming semiconductor devices with fin structures and epitaxially grown source/drain structures, including the use of semiconductor protection layers with a higher carbon atomic concentration to prevent damage during subsequent processes, such as etching and cleaning, while enhancing device performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but fabrication process difficulty and device reliability deteriorate
Solution Approach 1:
A protection layer is formed over the fin structure before subsequent fabrication steps. This preliminary protective measure prevents damage to the fin structure during etching and cleaning processes that follow, thereby maintaining device reliability while enabling continued scaling for improved productivity
Solution Approach 2:
The protection layer acts as an intermediary between the fin structure and harmful fabrication processes. It shields the fin structure from direct exposure to etchants and cleaning chemicals, preventing damage while allowing the fabrication process to proceed with smaller feature sizes
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but fabrication process complexity deteriorates
Solution Approach 1:
The protection layer is formed in advance before complex etching and cleaning steps. This preliminary structure simplifies subsequent fabrication steps by preventing damage that would require additional repair or rework steps, thereby reducing overall fabrication process complexity
Solution Approach 2:
The protection layer has specific material properties (carbon atomic concentration higher than the fin structure) that enable it to withstand subsequent fabrication processes. This parameter optimization allows standard fabrication processes to be used even at smaller feature sizes, reducing process complexity
3Reliability
If a protection layer with higher carbon atomic concentration is used to protect fin structures, then device reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The protection layer is formed by adjusting deposition parameters (such as methane flow rate) to achieve a carbon atomic concentration higher than the fin structure. This parameter control is integrated into existing fabrication processes, protecting devices without requiring entirely new manufacturing equipment or procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves the formation and reliability of FinFETs by protecting the fin and source/drain structures from damage, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
a semiconductor protection layer is formed over the fin structure and the epitaxially grown source/drain structures
Data Source
AI summary
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.