FinFET Cell Pitch Consistency via Segmented Active and Dummy Fin Arrangement

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Solution Overview

Problem

Current semiconductor integrated circuits face challenges in reducing the size of cells within fin field effect transistors while maintaining consistent pitch values for active and dummy fins, which affects integration and manufacturing efficiency.

Innovation Solution

The design incorporates a semiconductor integrated circuit with cells comprising active and dummy fins arranged in parallel, where the pitch of both types of fins remains constant regardless of height changes, allowing for flexible integration and simplified manufacturing across different libraries.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the number of fins is increased to reduce cell size, then integration is improved, but maintaining consistent pitch values becomes more difficult

Engineering Contradiction:
ImproveintegrationVSAvoidpitch consistency
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The cell is divided into multiple regions (first region with active fins, second region with dummy fins, third region with active fins) to systematically manage fin arrangement. This segmentation allows different fin types to be organized in specific zones, making it easier to maintain consistent pitch values across the entire cell while increasing the total number of fins for improved integration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the cell have different fin configurations - the first and third regions contain active fins for electrical functionality, while the second region contains dummy fins for pitch consistency. This local differentiation allows each region to serve its specific purpose while contributing to the overall goal of maintaining consistent pitch values throughout the cell structure.

Inventive Principle:
Principle #3Local quality

2Productivity

If cell height is reduced to improve integration, then device density increases, but manufacturing complexity increases

Engineering Contradiction:
ImproveintegrationVSAvoidmanufacturing complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

Dummy fins are extracted as a separate functional element from the active fins. These dummy fins are specifically placed in the second region to maintain pitch consistency without adding electrical complexity. This extraction allows the cell to achieve reduced height and improved integration while keeping manufacturing processes manageable by separating structural support functions from electrical functions.

Inventive Principle:
Principle #2Taking out (Extraction)

3Area of stationary object

If active fins and dummy fins are arranged together, then space utilization improves, but pitch consistency becomes harder to maintain

Engineering Contradiction:
Improvespace utilizationVSAvoidpitch consistency
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The cell is segmented into distinct regions where active fins and dummy fins are separated. The first region contains active fins, the second region contains dummy fins, and the third region contains active fins. This spatial segmentation ensures that pitch consistency can be maintained within each region type while still achieving high overall space utilization through the compact three-region arrangement.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple functional regions are merged into a single integrated cell structure. The first region with active fins, the second region with dummy fins, and the third region with active fins are combined in sequence, creating a compact cell that achieves high space utilization while maintaining pitch consistency through the systematic arrangement of merged regions.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9576978B2Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
Publication Date: 2017.02.21 SAMSUNG ELECTRONICS CO LTD
  • US9576978B2 patent drawing
  • US9576978B2 patent drawing
  • US9576978B2 patent drawing

AI summary

A semiconductor integrated circuit (IC) may comprise at least one cell comprising at least one fin field-effect transistor (FET). The at least one cell may comprise a plurality of fins that extend in a first direction and are arranged in parallel to each other in a second direction that is perpendicular to the first direction. A size of the at least one cell in the second direction may correspond to a number and a pitch of the plurality of fins.