FinFET Contact Depth Control for High-Voltage Stability
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Solution Overview
Problem
Current semiconductor devices face challenges in enhancing device operating characteristics, particularly in high-voltage operations, due to limitations in contact design and trench structures, which affect the stability and efficiency of fin patterns and gate electrodes.
Innovation Solution
The semiconductor device incorporates a fin pattern group with specific trench structures and contact designs, where the contact intersects fewer fin patterns than the gate electrode, with distinct height configurations and insulating layers, to improve operating stability and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the contact intersects multiple fin patterns to improve electrical connectivity, then the electrical connection is enhanced, but the risk of short circuits between adjacent fin patterns increases
Solution Approach 1:
An insulating layer is introduced as an intermediary between the contact and the second fin pattern. This insulating layer prevents direct electrical contact between the contact and the second fin pattern, eliminating the short circuit risk while allowing the contact to maintain electrical connection with the first fin pattern through the gate electrode region.
Solution Approach 2:
The solution transitions from a two-dimensional planar contact design to a three-dimensional structure where the contact extends vertically through the gate electrode region. By utilizing the vertical dimension and controlling the depth of the contact, the design achieves electrical connection with the first fin pattern while preventing contact with the second fin pattern through the insulating layer barrier.
2Reliability
If the trench structure is deepened to improve fin pattern isolation, then the isolation between fin patterns is enhanced, but the manufacturing complexity and cost increase
Solution Approach 1:
Instead of uniformly deepening the entire trench structure, the patent applies different depths and structures to different regions. The first trench is formed at a specific depth to separate the first and second fin patterns, while the second trench is formed at a different depth in the extension region. This localized approach achieves necessary isolation without the excessive complexity of a uniformly deep trench throughout.
Solution Approach 2:
The trench structure is segmented into multiple distinct trenches (first trench and second trench) with different depths and locations, rather than using a single deep trench. This segmentation allows each trench to perform its specific isolation function at the appropriate depth, reducing overall manufacturing complexity compared to a single uniformly deep trench structure.
3Reliability
If the contact depth is increased to reach lower fin patterns, then electrical connectivity to deeper structures is improved, but the risk of contacting unintended fin patterns increases
Solution Approach 1:
The insulating layer serves as a mediator that allows the contact to extend to a greater depth without directly contacting the second fin pattern. The contact can penetrate through the gate electrode region to reach the first fin pattern, and the insulating layer prevents further contact with the second fin pattern, effectively controlling the electrical connection depth without requiring precise depth control alone.
Solution Approach 2:
The gate electrode region and insulating layer configuration creates a self-limiting structure where the contact naturally stops at the appropriate depth. The insulating layer is positioned such that it automatically prevents the contact from reaching the second fin pattern, eliminating the need for extremely precise depth control during manufacturing.
Data Source
AI summary
A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.