FinFET Contact Layout With Isolation Structure for Short-Channel Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in scaling density and effectively suppressing short channel effects while maintaining current control capability, particularly in multi-gate transistors with three-dimensional channels.
Innovation Solution
The semiconductor device incorporates a novel element isolation structure with fin-shaped patterns and gate electrodes, along with specific source/drain contacts and wiring structures, including upper and lower contact regions and dummy contact regions, to enhance connectivity and control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistors with three-dimensional channels are used to increase scaling density, then the current control capability is improved, but the short channel effect becomes more severe
Solution Approach 1:
The device is divided into multiple fin-shaped patterns (first, second, third, fourth fins) arranged in alternating configurations with element isolation structures between them. This segmentation creates multiple independent channels that can be controlled separately, improving current control capability while maintaining high scaling density through the three-dimensional channel structure.
Solution Approach 2:
Element isolation structures are introduced as intermediary components between the fin-shaped patterns. These isolation structures effectively suppress the short channel effect by electrically isolating adjacent fins, preventing harmful interactions between neighboring channels while allowing each fin to maintain its three-dimensional current control characteristics.
2Productivity
If multiple fin-shaped patterns are arranged closely to increase density, then the scaling density is improved, but the manufacturing precision becomes more difficult to maintain
Solution Approach 1:
Element isolation structures serve as intermediary reference features between fin-shaped patterns. These isolation structures provide clear physical boundaries and alignment references that simplify the manufacturing process, enabling precise positioning of multiple fins without requiring extremely tight tolerances. The isolation structures act as spacers and alignment guides during fabrication.
Solution Approach 2:
The element isolation structures combine multiple functions: they electrically isolate adjacent fins, provide mechanical support, serve as alignment references, and act as spacers maintaining consistent spacing between fins. This merging of functions into a single structural element simplifies manufacturing while enabling high-density fin arrangements.
3Ease of operation
If complex source/drain contact structures with multiple regions are used to enhance connectivity, then the current control capability is improved, but the device complexity increases
Solution Approach 1:
The source/drain contact structure is segmented into distinct functional regions: lower contact regions that intersect the fin patterns to provide electrical connection, upper contact regions that protrude for wiring connectivity, and dummy contact regions that maintain structural symmetry. This segmentation allows each region to be optimized for its specific function while maintaining overall structural simplicity through systematic repetition.
Data Source
AI summary
A semiconductor device includes an isolation structure having first and second sidewalls opposite each other, a first fin-shaped pattern in contact with the first sidewall and extending in the second direction, a second fin-shaped pattern in contact with the second sidewall and extending in the second direction, a first gate electrode on the first fin-shaped pattern, a first source/drain contact on the first and second fin-shaped patterns and extending between the first gate electrode and the element isolation structure, and a wiring structure on and connected to the first source/drain contact, wherein the first source/drain contact includes a lower contact intersecting the first and second fin-shaped patterns, an upper contact protruding from the lower contact, and a dummy contact, the wiring structure being in contact with the upper contact and not with the dummy contact.