FinFET Contact Plug Void for Integration Density
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Solution Overview
Problem
The increasing demand for high-performance, high-speed, and multifunctionality in semiconductor devices necessitates finer patterns and narrower separation distances, which poses challenges for planar metal oxide semiconductor FETs, prompting the development of FinFETs with three-dimensional channel structures.
Innovation Solution
A semiconductor device design featuring an active fin on a substrate with a gate structure intersecting the fin, source/drain regions, a silicide layer, and contact plugs, where a void is strategically positioned between the silicide layer and the contact plug to enhance integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If planar metal oxide semiconductor FETs are used, then manufacturing is simpler, but integration density and performance are limited
Solution Approach 1:
The patent transitions from planar 2D channel structure to three-dimensional FinFET structure, utilizing vertical dimension to enhance channel control and integration density. The active fin extends vertically from the substrate, creating a 3D channel that improves device performance while enabling higher integration.
2Productivity
If finer patterns are implemented, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
By moving to 3D FinFET structure, the patent achieves higher integration density without proportionally increasing lateral pattern fineness requirements. The vertical fin structure provides additional degree of freedom for scaling.
Solution Approach 2:
The patent implements nested void structures within the contact plug formation process. Multiple voids are positioned at different vertical levels within the contact region, enabling complex 3D integration while managing manufacturing complexity through hierarchical structuring.
3Productivity
If narrower separation distances are used, then integration density increases, but device reliability may deteriorate
Solution Approach 1:
The 3D FinFET structure with vertical fins allows narrower lateral separation while maintaining device performance through enhanced gate control in the vertical dimension. The gate structure wraps around the active fin, providing superior electrostatic control.
Solution Approach 2:
The patent introduces void structures as intermediary elements between contact plugs and source/drain regions. These voids serve as stress management and electrical isolation elements, enabling narrower separations while maintaining reliability through intermediate functional layers.
4Productivity
If voids are positioned between silicide layer and contact plug, then integration and performance are enhanced, but device complexity increases
Solution Approach 1:
The patent embeds multiple voids within the contact plug structure at different vertical levels. These nested voids create complex 3D contact architectures that enhance device performance through improved electrical characteristics and stress management, while the hierarchical organization manages the inherent complexity.
Data Source
AI summary
A semiconductor device includes an active fin extended in a first direction on a substrate. A gate structure extends in a second direction, wherein the gate structure intersects the active fin and covers an upper portion of the active fin. A source/drain region is positioned on the active fin adjacent to the gate structure. A silicide layer is on the source/drain region. A contact plug is connected to the source/drain region. A void is present between the silicide layer and the contact plug.