FinFET Contact Plug Wetting Layer for Reliable Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As IC devices are downscaled to meet the demand for smaller, lighter electronic products, the short channel effect (SCE) degrades their reliability, and the reduced size of contact structures compromises electrical connection reliability.
Innovation Solution
An integrated circuit (IC) device with a fin-type active region and a contact structure that includes a contact plug made of a specific material, surrounded by a wetting layer with a different material having a lattice constant differing by 10% or less, which enhances adhesion and filling characteristics to ensure reliable electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the contact structure size is reduced to meet downscaled IC device requirements, then the IC device size is reduced, but the electrical connection reliability deteriorates due to short channel effect and manufacturing challenges
Solution Approach 1:
A wetting layer is introduced as an intermediary between the contact plug and the underlying layers. This wetting layer has specific material properties (lattice constant within 10% of the contact plug material, and/or amorphous structure, and/or superconductor properties) that enable it to mediate the interface, improving adhesion and preventing void formation in the downscaled contact structure, thereby maintaining electrical connection reliability despite the reduced size
Solution Approach 2:
The patent changes the material parameters of the wetting layer, specifically selecting materials with lattice constants within 10% of the contact plug material, or possessing amorphous structure, or superconductor properties. These parameter changes optimize the interface characteristics and filling behavior in reduced-size contact structures, ensuring reliable electrical connections
2Volume of moving object
If the contact structure size is reduced, then the IC device becomes smaller, but voids and seams form in the contact plug during manufacturing, compromising connection quality
Solution Approach 1:
The wetting layer serves as a mediator that improves the filling characteristics of the contact plug. By selecting materials with matched lattice constants (within 10%) or specific structural properties (amorphous, superconductor), the wetting layer promotes uniform material deposition and prevents void and seam formation during the contact plug fabrication process, ensuring high manufacturing precision in downscaled structures
Solution Approach 2:
The patent modifies the material parameters of the wetting layer to optimize contact plug filling. Specifically, it selects materials with lattice constants within 10% of the contact plug material, or with amorphous structure, or superconductor properties. These parameter changes enhance the wetting and filling behavior during manufacturing, preventing defects in reduced-size contact structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution allows for a reduced-size contact structure with improved electrical connection reliability, preventing voids and seams in the contact plug, thus enhancing the overall performance and reliability of the IC device.
Implementation Method 1
a first wetting layer surrounding the first contact plug, the first wetting layer including a second material having a lattice constant that differs from a lattice constant of the first material by about 10% or less
Data Source
AI summary
An integrated circuit (IC) device includes a substrate having a fin-type active region extending in a first direction, a gate structure intersecting the fin-type active region on the substrate, the gate structure extending in a second direction perpendicular to the first direction and parallel to a top surface of the substrate, source and drain regions on both sides of the gate structure, and a first contact structure electrically connected to one of the source and drain regions, the first contact structure including a first contact plug including a first material and a first wetting layer surrounding the first contact plug, the first wetting layer including a second material having a lattice constant that differs from a lattice constant of the first material by about 10% or less.