FinFET Contact Structure Width Variation for Short Circuit Prevention

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Solution Overview

Problem

The miniaturization of integrated circuit devices leads to a short channel effect, reducing the reliability of transistors and causing potential short circuits between contact structures and neighboring gate lines, particularly in fin type active regions.

Innovation Solution

The integrated circuit device incorporates a contact structure with a first portion extending between gate lines and a second portion crossing the gate isolation insulating layer, where the first portion has a greater width in the first direction than the second portion, ensuring a sufficient separation distance to prevent short circuits and enhance reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If the contact structure size is decreased to meet smaller design rules, then the integration density is improved, but the reliability deteriorates due to short channel effect and potential short circuits

Engineering Contradiction:

Improvecontact structure sizeVSAvoidtransistor reliability

Core Design Contradiction:

Area of moving objectVSReliability

Solution Approach 1:

The contact structure is designed with different width characteristics in different regions: a first width in the first direction for the first portion and a second width for the second portion. This local variation in dimensions allows the contact structure to maintain sufficient separation from gate lines in critical areas while minimizing overall size, thereby improving integration density without sacrificing reliability

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The contact structure utilizes multiple dimensions and directions (first direction and second direction perpendicular to it) to achieve its function. By extending in the second direction and having different width characteristics in the first direction, the structure creates adequate separation distance from gate lines in three-dimensional space, preventing short circuits while maintaining small footprint

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Area of moving object

If the contact structure size is decreased to meet smaller design rules, then the integration density is improved, but short circuits between contact structures and gate lines may occur

Engineering Contradiction:

Improvecontact structure sizeVSAvoidshort circuit risk

Core Design Contradiction:

Area of moving objectVSObject-affected harmful factors

Solution Approach 1:

The contact structure implements local quality by having different width characteristics in different portions: the first portion has a first width in the first direction while the second portion has a second width, where the first width is greater than the second width. This ensures sufficient separation distance from gate lines in the first direction where short circuits are most likely to occur, while minimizing the overall area occupied by the contact structure

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The gate isolation insulating layer serves as an intermediary element between the contact structure and the gate line. The contact structure extends to cross this insulating layer, and the insulating layer provides electrical isolation that prevents direct contact and potential short circuits between the conductive contact structure and the gate line, enabling safer miniaturization

Inventive Principle:

Principle #24Intermediary (Mediator)

3Area of moving object

If the contact structure size is decreased, then the design rule compliance is improved, but the electrical connection reliability deteriorates

Engineering Contradiction:

Improvecontact structure sizeVSAvoidelectrical connection precision

Core Design Contradiction:

Area of moving objectVSManufacturing precision

Solution Approach 1:

The contact structure employs local quality by varying its width in different regions: a first width in the first direction for the first portion and a second width for the second portion, where the first width is greater. This ensures that the portion closer to the gate structure maintains adequate dimensions for reliable electrical connection, while the overall structure remains compact to comply with design rules

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS11152359B2Integrated circuit device and a method of manufacturing the same

Publication Date: 2021.10.19 SAMSUNG ELECTRONICS CO LTD

AI summary

An integrated circuit device includes: a substrate including a fin type active region extending in a first direction; a gate structure intersecting the fin type active region and extending in a second direction perpendicular to the first direction; a source/drain region on sides of the gate structure; a gate isolation insulating layer contacting an end of the gate structure; a first contact connected to the source/drain region; and a second contact connected to the source/drain region, the second contact being longer in the second direction than the first contact, the second contact includes a first portion extending in the second direction from an area adjacent to one side of the gate structure beyond the end of the gate structure and facing a sidewall of the gate structure, and a second portion facing a sidewall of the gate isolation insulating layer, and the first portion is wider than the second portion.