FinFET Doped Layer Annealing for Leakage Control
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Solution Overview
Problem
Current FinFET fabrication techniques face challenges with current leakage and performance issues due to the design of fin-shaped structures, which affect the overall efficiency of the device.
Innovation Solution
The method involves forming a substrate with fin-shaped structures and shallow trench isolation, followed by the application of doped layers and anneal processes to drive dopants into the top portions of these structures, allowing for the adjustment of threshold voltage and formation of doped regions, thereby improving the control over channel regions and reducing leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fin-shaped structure is used to increase channel control, then gate control over channel region is improved, but current leakage and short channel effects worsen
Solution Approach 1:
The patent applies different doping concentrations to different regions of the fin structure. Specifically, the first doped layer is formed with a first doping concentration in a first region, while the second doped layer is formed with a second doping concentration in a second region. This local variation in doping quality allows optimization of gate control in certain areas while mitigating current leakage in other areas, resolving the contradiction between improved gate control and reduced current leakage.
Solution Approach 2:
The fin structure is divided into multiple regions with distinct doping characteristics. The first doped layer and second doped layer are formed in different regions (first region and second region respectively) with different doping concentrations. This segmentation allows independent optimization of each region to address both gate control requirements and current leakage prevention simultaneously.
2Reliability
If doping concentration is increased to reduce short channel effect, then channel control is improved, but manufacturing precision requirements worsen
Solution Approach 1:
Instead of using a single high doping concentration throughout the fin structure, the patent segments the doping into two distinct layers with different concentrations. The first doped layer has a first doping concentration and the second doped layer has a second doping concentration. This segmentation allows the system to achieve the necessary short channel effect control without requiring extremely precise control of a single high-concentration doping process, thereby reducing manufacturing precision requirements.
Solution Approach 2:
The patent changes the doping concentration parameter across different regions and layers. By using a first doping concentration for the first doped layer and a second doping concentration for the second doped layer, the system can optimize short channel effect control while maintaining feasible manufacturing precision. The parameter variation allows flexibility in achieving performance targets without pushing manufacturing limits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the control over the channel region, reduces drain-induced barrier lowering and short channel effects, and increases current between the source and drain, while allowing for the adjustment of threshold voltage, thereby improving the overall performance of FinFET devices.
Implementation Method 1
performing a first anneal process
Data Source
AI summary
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.