FinFET Transistors with Distinct Doping Concentrations
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Solution Overview
Problem
The limited range of threshold voltage Vt in Fin Field-Effect Transistors (FinFETs) due to less sensitivity of channel dopant in thin fin structures, which restricts the performance of semiconductor devices, is addressed by employing heavily doped materials.
Innovation Solution
The use of heavily doped materials with different doping concentrations for sources and drains in FinFET transistors, creating distinct doping concentrations between adjacent transistor circuits to enhance the threshold voltage range, while maintaining similar gate pitches and critical dimensions across different transistor types.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If thin fin structures are used in FinFETs, then device performance is improved, but the range of threshold voltage Vt is limited due to less sensitivity of channel dopant
Solution Approach 1:
The patent applies local quality by implementing different doping concentrations in specific regions: lightly doped channel region for high sensitivity and threshold voltage control, while heavily doped source/drain regions provide stable electrical characteristics. This spatial differentiation of doping quality enables both improved device performance and expanded threshold voltage range in thin fin structures.
Solution Approach 2:
The patent utilizes parameter changes by varying the doping concentration across different regions of the FinFET. The channel region maintains low doping concentration (e.g., 1E18 to 1E20 atoms/cm³) for high dopant sensitivity, while source/drain regions use higher doping concentrations (e.g., 1E19 to 1E21 atoms/cm³). This parameter differentiation resolves the contradiction between performance and threshold voltage range.
2Adaptability or versatility
If heavily doped material is employed to increase threshold voltage Vt, then the threshold voltage range is expanded, but the sensitivity of channel dopant is reduced
Solution Approach 1:
The patent segments the FinFET structure into distinct doping zones: a lightly doped channel segment for high sensitivity operations, and heavily doped source/drain segments for threshold voltage expansion. This segmentation allows each region to optimize its function without compromising the other, resolving the contradiction between threshold voltage range and dopant sensitivity.
Solution Approach 2:
By applying local quality through region-specific doping concentrations, the patent maintains high channel dopant sensitivity in the channel region while achieving expanded threshold voltage range through heavily doped source/drain regions. The local differentiation of doping quality enables simultaneous optimization of both parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the threshold voltage range, improving the performance and sensitivity of FinFETs by allowing for more precise control over doping concentrations, thereby enhancing the operational capabilities of semiconductor devices.
Implementation Method 1
The use of heavily doped materials with different doping concentrations for sources and drains in FinFET transistors, creating distinct doping concentrations between adjacent transistor circuits
Data Source
AI summary
A semiconductor device includes a first cell and a second cell. The first cell includes a first circuit, and the first circuit includes a first gate. The second cell is disposed adjacent the first cell and includes a second circuit which includes a second gate. The doping concentration of the first circuit is different from that of the second circuit, and the first gate and the second gate have the same gate critical dimension. A method for manufacturing the semiconductor device is also disclosed herein.