FinFET Drive Current Modulation via Selective Fin Shorting
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Solution Overview
Problem
Conventional methods for modulating the drive current in finFET devices are limited by expensive and complex mask fabrication processes, which require significant design effort and are not efficient for configuring functions in integrated circuit devices.
Innovation Solution
A method for fabricating transistor structures with multiple fins, where a gate structure is formed between fin portions, and conductive segments are used to short and isolate fins, allowing for the modification of drive current by enabling or disabling fins, thereby reducing the need for multiple masks and simplifying the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple masks are used to select fins for modifying drive current, then drive current modulation is achieved, but fabrication cost and design complexity increase significantly
Solution Approach 1:
The patent extracts the drive current modulation function from the mask fabrication process itself. By forming all fins initially and then selectively isolating or connecting specific fins through subsequent processing steps, the need for multiple complex masks is eliminated. The modulation capability is achieved through structural configuration rather than through complex photolithography patterns.
Solution Approach 2:
Instead of using masks to selectively form only the desired fins (conventional approach), the patent inverts the approach by forming all fins and then selectively removing or isolating unwanted fins. This inversion simplifies the mask requirements, as the masks are now used for isolation rather than for defining the entire fin structure.
2Adaptability or versatility
If multiple masks are used to select fins for modifying drive current, then drive current modulation is achieved, but fabrication time and process steps increase
Solution Approach 1:
The patent merges the fin formation step with the initial transistor fabrication process, forming all fins simultaneously in a single processing step. The drive current modulation is then achieved by selectively isolating or connecting these pre-formed fins, combining multiple functions into fewer process steps and improving fabrication efficiency.
Solution Approach 2:
The patent performs preliminary fin formation for all potential fins before the modulation step. By having all fins already formed and positioned, the subsequent isolation or connection operations can proceed more efficiently without requiring repeated mask alignments or multiple formation steps, thus improving overall productivity.
3Loss of energy
If fins are selectively isolated to modify drive current, then power consumption is optimized, but additional contact segments and isolation structures are required
Solution Approach 1:
The patent introduces gap structures as intermediary elements between fins to achieve electrical isolation. These gaps serve as mediators that prevent current flow between adjacent fins without requiring direct physical contact between isolation structures, simplifying the overall device architecture while achieving the desired power optimization.
Solution Approach 2:
The patent segments the contact structure into multiple contact segments, each connected to specific fins. This segmentation allows selective electrical connection to individual fins or groups of fins, enabling precise control over drive current and power consumption while maintaining a relatively simple overall contact structure.
Data Source
AI summary
A transistor device is provided. The transistor device includes a group of fins formed in a substrate, where the group of fins comprises at least one enabled fin and at least one disabled fin. Each of the fins has first and second fin portions. The first fin portion encompasses a drain region and the second fin portion of the fins encompasses a source region. These two regions are separated by a channel region. A gate structure is formed over the fins and channel region and in between the first fin portion and the second fin portion of the fins. The transistor device further includes a conductive structure. The conductive structure shorts the first fin portion of the at least one disabled fin to the second fin portion of the at least one disabled fin.