FinFET ESD Protection via Guard Ring Doping
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices with fin structures are susceptible to device failures due to electrostatic discharge (ESD) events, which affect their performance and reliability.
Innovation Solution
A semiconductor device design incorporating a p-n junction diode with a sufficiently large area, formed by a first doped region, a second doped region, two fin members, and an isolation member, where the second doped region has a higher carrier concentration than the first doped region and fin members, and is positioned between them, providing effective protection against ESD events.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fin structures are used to mitigate short-channel effects, then device performance is improved, but susceptibility to ESD events increases
Solution Approach 1:
The patent applies preliminary anti-action by pre-configuring protection structures (guard rings with doped regions and isolation members) around the fin structures before ESD events occur. These structures are designed in advance to counteract ESD damage, creating a protective barrier that activates during ESD events to prevent harm to the fin structures.
Solution Approach 2:
The patent uses intermediary elements (isolation members and guard ring structures) positioned between the ESD event and the fin structures. These intermediaries intercept and dissipate ESD energy through carefully designed doped regions with specific carrier concentrations, preventing direct damage to the performance-critical fin structures.
2Reliability
If doped regions are added to protect against ESD, then ESD protection is improved, but device complexity increases
Solution Approach 1:
The patent merges protection functions with existing device structures by integrating guard rings and isolation members into the conventional fin structure layout. The doped regions are combined with the isolation members to form composite protection structures that provide ESD protection while maintaining compatibility with standard device architectures.
Solution Approach 2:
The patent applies local quality by varying the carrier concentration of doped regions in specific locations (higher concentration in second doped regions for ESD protection, lower concentration in first doped regions for normal operation). This localized differentiation provides targeted ESD protection exactly where needed around the fin structures without unnecessarily complicating the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively protects semiconductor devices against ESD events, ensuring satisfactory performance and reliability of both the semiconductor device and associated electronic devices.
Implementation Method 1
semiconductor devices with fin structure may be substantially susceptible to device failures caused by electrostatic discharge (ESD) events
Implementation Method 2
A semiconductor device design incorporating a p-n junction diode with a sufficiently large area, formed by a first doped region, a second doped region
Data Source
AI summary
A semiconductor device may include a first doped region, a second doped region, two fin members, and an isolation member. The first doped region may have a first dopant type. The second doped region may have a second dopant type and may be positioned between two portions of the first doped region. The two fin members may overlap at least one of the first doped region and the second doped region. The isolation member may be formed of a dielectric material and may be positioned between the two fin members. The second doped region may be positioned between the isolation member and the first doped region.