FinFET ESD Protection Device Heat Dissipation via Segmented Fin
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Solution Overview
Problem
FINFET devices used in ESD protection circuits suffer from poor heat dissipation due to their narrow fin-type gate structure, leading to self-heating and performance degradation.
Innovation Solution
An ESD protection device is designed with a semiconductor substrate and fin structure, including doped regions and gate structures that prevent channel formation during operation, allowing current to flow over a larger area and reducing heat dissipation issues. This is achieved by electrically connecting the gate structure to the same potential as the doped regions, and incorporating a work function adjustment layer to make channel formation more difficult.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If FINFET devices are used as ESD protection devices, then device size is reduced and channel charge control is improved, but heat dissipation becomes poor leading to self-heating and performance degradation
Solution Approach 1:
The semiconductor fin is divided into multiple segments along its length, with each segment containing a doped region. This segmentation allows current to flow through multiple parallel paths across different segments, distributing the current density and reducing localized heating while maintaining the compact FINFET structure.
Solution Approach 2:
The invention transitions from conventional planar current flow to three-dimensional current distribution through the fin structure. By creating doped regions at different positions along the fin length and connecting them via conductive structures, current flows through multiple spatial dimensions, increasing the effective heat dissipation area while maintaining small device footprint.
2Productivity
If FINFET devices are used as ESD protection devices, then CMOS device size is reduced, but self-heating problems become serious causing ESD device performance degradation
Solution Approach 1:
Conductive structures are used to connect gate structures and doped regions to the same potential, preventing parasitic channel formation and ensuring predictable current flow paths. This equipotential connection eliminates unwanted voltage drops and ensures reliable ESD protection performance while maintaining high integration density.
Solution Approach 2:
The invention modifies the electrical parameters of the fin structure by introducing doped regions with specific conductivity types and concentrations. These parameter changes create controlled current flow paths that distribute current density, reducing self-heating effects while maintaining the high integration density required for modern CMOS devices.
3Area of stationary object
If gate structure is electrically connected to doped regions at the same potential, then channel formation is prevented and current flows over larger area, but device structure complexity increases
Solution Approach 1:
The conductive structures serve multiple functions: they connect doped regions to establish equipotential conditions, provide current flow paths, and replace gate functions in certain configurations. This multi-functionality increases structural complexity but eliminates the need for separate components, achieving net simplification in the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the likelihood of performance degradation by dispersing current over a larger area, improving heat dissipation and protecting internal circuits from electrostatic discharge.
Implementation Method 1
incorporating a work function adjustment layer to make channel formation more difficult
Implementation Method 2
electrically connecting the gate structure to the same potential as the doped regions, allowing current to flow over a larger area
Data Source
AI summary
An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a semiconductor fin located on the semiconductor substrate. The semiconductor fin includes a well region, a first doped region, and a second doped region. The first doped region and the second doped region are respectively adjacent to and being separated by a first portion of the well region. The device also includes a first gate structure on the semiconductor fin between the first doped region and the second doped region, and a first conductive structure electrically connecting the gate structure and the first doped region to a same potential. The ESD protection device can also have a third doped region and a second gate structure coupled to the same potential. The device also has a second conductive structure for connecting to a point between an external signal and a circuit to be protected.