FinFET Etch Stop Layer Integrity During Contact Formation
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Solution Overview
Problem
In the manufacturing of FinFET transistors, insufficient control over the etch stop layer during the formation of contacts can lead to reliability issues and increased junction leakage due to conductive material filling openings between the semiconductive material and fins, causing structural and functional problems.
Innovation Solution
The formation of the semiconductive material and etch stop layer is controlled to ensure a sufficient thickness of the etch stop layer above the widest portions of the semiconductive material, preventing openings and thus avoiding conductive material formation between the fins and semiconductive material, which involves adjusting dimensions and etch processes to maintain the integrity of the etch stop layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the etch stop layer is removed during contact formation, then contact access is improved, but conductive material fills openings between semiconductive material and fins causing reliability issues
Solution Approach 1:
The patent applies preliminary action by forming a contact etch stop layer before contact formation that extends beyond the widest portion of the semiconductive material. This preliminary positioning prevents conductive material from filling openings between the semiconductive material and fins during subsequent contact formation, thus solving the reliability issue while maintaining ease of contact formation.
Solution Approach 2:
The contact etch stop layer serves as an intermediary element between the semiconductive material and the contact opening. It mediates the contact formation process by providing a protective barrier that prevents conductive material from improperly filling openings, thereby enabling reliable contact formation without compromising device reliability.
2Reliability
If the etch stop layer thickness is increased, then openings are prevented, but manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by optimizing the thickness of the contact etch stop layer to extend beyond the widest portion of the semiconductive material. This specific dimensional parameter change prevents openings and junction leakage while maintaining a controlled, manufacturable structure. The solution balances reliability improvement with manufacturing feasibility by precisely controlling the etch stop layer dimensions rather than simply increasing thickness indiscriminately.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents the formation of conductive material between the fins and semiconductive material, enhancing reliability and reducing junction leakage, thereby improving the manufacturing process and device performance.
Implementation Method 1
The formation of the semiconductive material and etch stop layer is controlled to ensure a sufficient thickness of the etch stop layer above the widest portions of the semiconductive material, preventing openings and thus avoiding conductive material formation between the fins and semiconductive material
Data Source
AI summary
Methods of manufacturing semiconductor devices and transistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece comprising a plurality of fins, and forming a semiconductive material over a top surface of the plurality of fins. An etch stop layer is formed over the semiconductive material, and an insulating material is disposed over the etch stop layer. The insulating material and a portion of the etch stop layer are removed from over the plurality of fins. Forming the semiconductive material or forming the etch stop layer are controlled so that removing the portion of the etch stop layer does not remove the etch stop layer between a widest portion of the semiconductive material over the plurality of fins.