FinFET Fin Height Segmentation for Channel Width Control
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Solution Overview
Problem
Fin-type field effect transistors (FinFETs) are limited to channel widths that are integer multiples of the semiconductor fin height, restricting design optimization across various operating parameters.
Innovation Solution
A process is developed to form semiconductor fins of different heights for FinFETs, allowing for varying channel widths by selectively removing portions of the fins and doping them with different conductivity types or crystal orientations, enabling a broader range of channel widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If FinFETs are formed with channel widths as integer multiples of fin height, then manufacturing simplicity is maintained, but design flexibility and operational characteristics are restricted
Solution Approach 1:
The fin structure is segmented into multiple portions along its length, with each portion having a different height. This segmentation allows different channel widths to be created from a single fin, enabling design flexibility without requiring multiple fin formation processes. The fin is divided into first, second, and third portions with progressively different heights to achieve varying channel widths.
Solution Approach 2:
Different portions of the fin are given different local properties (heights) to optimize specific regions for different operational characteristics. The first portion maintains original height for standard channel width, while second and third portions are selectively reduced to create narrower channel widths in those specific regions, allowing localized optimization of device performance.
2Adaptability or versatility
If selective removal of fin portions is performed, then varied channel widths are achieved, but manufacturing process complexity increases
Solution Approach 1:
Mandrel structures are formed preliminarily at specific locations before fin formation. These mandrels serve as templates that define where fin portions will be selectively removed later. By preparing these removal regions in advance through mandrel formation, the subsequent selective removal process becomes more controlled and manufacturable, reducing overall process complexity.
Solution Approach 2:
Mandrel structures act as intermediary elements that facilitate the selective removal process. The mandrels are formed first, then fins are grown around them, and finally the mandrels are removed to create the desired fin portion removal patterns. This intermediary approach simplifies the manufacturing by breaking down a complex selective removal process into manageable sequential steps.
Data Source
AI summary
A process for forming an electronic device can include forming a semiconductor fin of a first height for a fin-type structure and removing a portion of the semiconductor fin such that the semiconductor fin is shortened to a second height. In accordance with specific embodiment a second semiconductor fin can be formed, each of the first and the second semiconductor fins having a different height representing a channel width. In accordance with another specific embodiment a second and a third semiconductor fin can be formed, each of the first, the second and the third semiconductor fins having a different height representing a channel width.