FinFET Active Fin Isolation Structure for Lower-Cost Integration
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Solution Overview
Problem
The increasing demand for high-performance, high-speed, and multifunctional semiconductor devices has led to a need for improved integration density, but existing technologies face challenges in achieving reliable semiconductor devices with complex manufacturing processes.
Innovation Solution
A semiconductor device design featuring active fins with isolation patterns and gate structures, including gate spacers and insulating layers, is proposed, which allows for the formation of both SOI FinFET and bulk FinFET transistors on a single substrate using a simplified process, eliminating the need for expensive SOI substrates and mitigating short-channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SOI substrates are used to form FinFET transistors, then device performance and reliability are improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent replaces expensive SOI substrates with a disposable sacrificial pattern (made of silicon germanium or other removable materials) that is formed on a conventional semiconductor substrate. This sacrificial pattern is temporarily used to define the fin structure and is subsequently removed, allowing the formation of FinFETs without requiring costly SOI substrates. The sacrificial pattern serves its purpose during manufacturing and is then discarded, embodying the principle of using cheap, disposable objects to achieve high-performance device structures.
2Productivity
If complex manufacturing processes are used to achieve high integration density, then device performance is improved, but process complexity and production difficulty increase
Solution Approach 1:
The patent merges the formation of the isolation pattern and gate spacer into a single unified process step. By forming both structures simultaneously using the same sacrificial pattern removal process and subsequent material deposition, the manufacturing process is simplified while still achieving the required isolation and spacing functions. This consolidation reduces the number of discrete process steps and lowers overall process complexity.
Solution Approach 2:
The sacrificial pattern serves multiple functions during the manufacturing process: it defines the fin structure geometry, acts as a mask for subsequent etching steps, and provides the template for forming both the isolation pattern and gate spacer. This multi-functionality reduces the need for separate dedicated structures and process steps, thereby simplifying the overall manufacturing process while maintaining high integration density.
3Manufacturing precision
If isolation patterns and gate spacers are formed separately, then manufacturing precision is maintained, but process time and production efficiency decrease
Solution Approach 1:
The patent combines the formation of the isolation pattern and gate spacer into a single unified process step. By forming both structures simultaneously using the same sacrificial pattern removal process and subsequent material deposition, the manufacturing process is simplified while still achieving the required isolation and spacing functions. This consolidation reduces the number of discrete process steps and lowers overall process complexity.
Data Source
AI summary
A semiconductor device includes an active fin extending in a first direction on an upper surface of a substrate, the active fin comprising a first fin portion and a second fin portion on the first fin portion; an isolation pattern between the first fin portion and the second fin portion; a gate structure intersecting the active fin and extending in a second direction intersecting the first direction; and source/drain regions in regions of the second fin portion on both sides of the gate structure, respectively; wherein the gate structure includes a gate electrode intersecting a region of the active fin and extending in the second direction, a pair of gate spacers extending in the second direction along both side surfaces of the gate electrode in the first direction and including the same material as a material of the isolation pattern, and a gate insulating layer between the gate electrode and the active fin.