FinFET Fin Pattern Dopant Gradient for Thermal Management
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Solution Overview
Problem
Semiconductor devices face challenges in effectively dissipating heat generated in transistor channels, leading to reduced operating performance and reliability due to the narrow heat dissipation path in fin field effect transistors (FinFETs).
Innovation Solution
Incorporating a heat-conducting layer with a lower dopant concentration than the upper pattern and substrate, which allows for efficient heat dissipation from the channel region to the substrate, improving thermal conductivity and reducing self-heating effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a fin pattern structure is used to increase transistor density, then device scaling and integration density are improved, but heat dissipation capability deteriorates due to narrow heat dissipation paths
Solution Approach 1:
The patent applies local quality by creating a dopant concentration gradient within the fin pattern structure. The lower pattern has a different dopant concentration than the upper pattern, which locally optimizes thermal conductivity in the heat dissipation path without affecting the overall transistor density achieved by the fin structure.
Solution Approach 2:
The patent changes the physical parameter of dopant concentration to improve heat dissipation. By adjusting the dopant concentration in the lower pattern relative to the upper pattern, the thermal conductivity is modified to enhance heat removal from the channel region, directly addressing the heat dissipation problem while maintaining the fin structure's density benefits.
2Reliability
If dopant concentration is increased in the upper pattern to improve electrical performance, then current control capability is improved, but thermal conductivity decreases due to increased phonon scattering
Solution Approach 1:
The patent applies local quality by assigning different dopant concentrations to different regions of the fin pattern. The upper pattern maintains high dopant concentration for optimal current control and electrical performance, while the lower pattern has a different dopant concentration specifically optimized for heat dissipation, allowing each region to perform its specialized function independently.
Solution Approach 2:
The patent segments the fin pattern into distinct upper and lower patterns with independently optimized dopant concentrations. This segmentation allows the upper pattern to focus on electrical performance while the lower pattern focuses on thermal management, resolving the contradiction between these two competing requirements.
3Reliability
If self-heating effects are reduced by improving heat dissipation, then operating reliability is improved, but additional process steps are required to create dopant concentration gradients
Solution Approach 1:
The patent changes the dopant concentration parameter during the formation process to create the desired gradient. By controlling dopant diffusion or implantation conditions, the lower pattern can be given a different concentration than the upper pattern, achieving improved heat dissipation and reliability through a parameter modification that integrates into the existing fabrication process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the operating performance and reliability of semiconductor devices by efficiently dissipating heat generated in the channel region, thereby improving thermal management and reducing the risk of self-heating in FinFETs.
Implementation Method 1
Incorporating a heat-conducting layer with a lower dopant concentration than the upper pattern and substrate, which allows for efficient heat dissipation from the channel region to the substrate
Data Source
AI summary
A semiconductor device includes a first fin pattern, which includes a first lower pattern and a first upper pattern stacked sequentially on a substrate, the first upper pattern including a first part and second parts respectively disposed on both sides of the first part, a gate electrode, which is formed on the first part to intersect the first fin pattern, and source/drain regions, which are formed on the second parts, respectively. A dopant concentration of the first upper pattern is higher than a dopant concentration of the first lower pattern and a dopant concentration of the substrate, and the dopant concentration of the first lower pattern is different from the dopant concentration of the substrate.