FinFET Fin Pattern Layout for Dense and Uniform Transistor Arrays
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Solution Overview
Problem
As semiconductor devices trend towards higher integration density and smaller transistor sizes, existing methods struggle to maintain optimal operation properties, particularly in planar metal oxide semiconductor FETs, leading to limitations in performance and reliability.
Innovation Solution
The development of a semiconductor device with fin patterns and a device isolation layer, where fin patterns protrude above the isolation layer and are arranged with specific pitches and recess portions, along with gate structures intersecting these patterns, to enhance performance and reliability through precise patterning and manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor size is reduced to achieve higher integration density, then integration density is improved, but operation properties and reliability deteriorate
Solution Approach 1:
The patent transitions from planar transistors to FinFETs with three-dimensional channel structures. The fin patterns extend vertically from the substrate, creating a 3D active region that increases the effective channel area without proportionally increasing the footprint, thereby maintaining high integration density while improving device performance and reliability through enhanced carrier control
Solution Approach 2:
The substrate is divided into multiple pattern groups with fin patterns arranged in specific configurations. Each pattern group contains fins at controlled pitches, and recess portions are introduced to segment the continuous fin structure. This segmentation allows optimization of electrical properties while maintaining overall integration density
2Productivity
If fin patterns are arranged with minimum pitch to increase density, then integration density is improved, but manufacturing precision and uniformity deteriorate
Solution Approach 1:
The patent implements different pitch values in different regions by introducing recess portions at specific locations. The first pattern group has fins at minimum pitch for maximum density, while recess portions are strategically placed to create spacing in critical areas. This local variation in pitch maintains manufacturing precision where needed while achieving high overall density
Solution Approach 2:
Recess portions are introduced as intermediary structures between fin patterns. These recess portions act as buffer zones that facilitate precise patterning by providing relief in high-density regions, enabling the formation of uniform fin patterns even at minimum pitch without compromising manufacturing precision
Data Source
AI summary
A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.