FinFET Gate Dielectric Layout for Higher Drive Current

The patent applies preliminary action by forming sacrificial structures (such as mandrels or spacers) before the final fin structure is created. These sacrificial structures serve as templates or guides that simplify the subsequent formation of the fin structures, reducing the overall fabrication complexity despite the additional steps required. The sacrificial structures are removed after transferring the pattern, leaving the desired fin geometry without requiring direct formation of complex three-dimensional structures.

The patent extracts the ion implantation process from the fin structure formation sequence by using sacrificial structures that are removed before the fin structures are created. This separation allows the ion implantation to be performed on simpler, planar sacrificial structures rather than on complex three-dimensional fin structures, thereby reducing geometrical effects and improving process control. The sacrificial structures are designed to be easily removed, leaving clean fin structures without contamination from the implantation process.

The patent applies universality by designing sacrificial structures that serve multiple functions: they act as pattern templates, provide mechanical support during fabrication, enable selective region definition, and facilitate the formation of different transistor types (including low power transistors). This multi-functionality reduces the need for separate dedicated steps for each transistor type, as the same sacrificial structure approach can be adapted for both high power and low power device regions, thereby reducing overall fabrication complexity despite the additional steps required for low power optimization.