FinFET Gate Electrode Parasitic Capacitance Reduction
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Solution Overview
Problem
The increasing integration density in semiconductor devices leads to higher parasitic capacitance between gate electrodes and other nodes, which degrades operating performance and reliability due to increased coupling between source/drain and gate electrodes.
Innovation Solution
A semiconductor device design featuring fin-type patterns with distinct gate electrodes and interlayer insulating structures of varying dielectric constants, including air gaps in some structures, to reduce parasitic capacitance by optimizing the dielectric properties and layout between the gate electrodes and other nodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased, then more functions can be integrated, but parasitic capacitance between gate electrodes and other nodes increases
Solution Approach 1:
The patent applies local quality by using different dielectric materials with different dielectric constants in different regions. Specifically, a first dielectric material with a lower dielectric constant is used in the first region between the first gate electrode and the second gate electrode, while a second dielectric material with a higher dielectric constant is used in the second region between the first gate electrode and the source/drain. This local differentiation optimizes the balance between reducing parasitic capacitance and maintaining device performance.
Solution Approach 2:
The patent changes the dielectric parameter (dielectric constant) by selecting materials with different dielectric constants for different regions. The first dielectric material has a lower dielectric constant to reduce parasitic capacitance between gate electrodes, while the second dielectric material has a higher dielectric constant to maintain appropriate capacitance between the gate electrode and source/drain, thus optimizing device operation.
2Object-generated harmful factors
If dielectric constant is reduced to lower parasitic capacitance, then coupling between gate electrodes is reduced, but capacitance between gate electrode and source/drain may be insufficient
Solution Approach 1:
The patent divides the insulating structure into two regions with different dielectric properties: the first region between gate electrodes uses a low dielectric constant material to reduce parasitic capacitance, while the second region between gate electrode and source/drain uses a high dielectric constant material to maintain sufficient coupling capacitance for proper device operation.
Solution Approach 2:
The insulating structure is segmented into two distinct regions with different dielectric materials. The first region (between gate electrodes) and second region (between gate electrode and source/drain) are separated and filled with different dielectric materials to achieve different electrical characteristics in different locations, simultaneously reducing parasitic capacitance and maintaining necessary coupling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces parasitic capacitance, enhancing operating performance and reliability by minimizing coupling between source/drain and gate electrodes, thereby improving the overall performance of semiconductor devices.
Implementation Method 1
a second interlayer insulating structure disposed between the second portion and the fourth portion, being on the substrate, and having a second dielectric constant which is different from the first dielectric constant
Data Source
AI summary
There is provided a semiconductor device to enhance operating characteristics by reducing parasitic capacitance between a gate electrode and other nodes. The semiconductor device includes: a substrate including an active region, and a field region directly adjacent to the active region; a first fin-type pattern protruding from the substrate in the active region; a first gate electrode disposed on the substrate, intersecting with the first fin-type pattern and including a first portion and a second portion, the first portion intersecting with the first fin-type pattern; a second gate electrode disposed on the substrate, intersecting with the first fin-type pattern and including a third portion and a fourth portion, the fourth portion facing the second portion, and the third portion intersecting with the first fin-type pattern and facing the first portion; a first interlayer insulating structure disposed between the first portion and the third portion, being on the substrate, and having a first dielectric constant; and a second interlayer insulating structure disposed between the second portion and the fourth portion, being on the substrate, and having a second dielectric constant which is different from the first dielectric constant.