FinFET Multi-Finger Gate Structure for Heat Management
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Solution Overview
Problem
FinFETs with a multi-finger structure generate excessive heat due to their design, leading to increased power consumption and reduced saturation current when attempting to minimize heat by reducing the number of fingers, which compromises transistor performance.
Innovation Solution
The semiconductor device incorporates a FinFET structure with a multi-finger configuration where gate electrodes are formed between element isolation regions, including a second gate electrode applied with a voltage to turn off transistors, maintaining a sufficient distance between isolation regions to alleviate stress and reduce heat generation without decreasing saturation current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the number of fingers in FinFET is increased to maintain saturation current, then saturation current is improved, but heat generation increases
Solution Approach 1:
The transistor gate is divided into multiple fingers arranged in parallel, which increases the effective channel width and saturation current while distributing heat generation across multiple smaller units, thereby reducing localized heat accumulation
Solution Approach 2:
The gate electrode structure transitions from a planar configuration to a three-dimensional FinFET structure with gates extending along the fin length, utilizing the vertical dimension to increase effective channel area and current capacity without proportionally increasing heat generation
2Temperature
If the number of fingers in FinFET is decreased to reduce heat generation, then heat generation is reduced, but saturation current decreases
Solution Approach 1:
Different regions of the transistor structure are optimized with distinct properties - the fin region provides high current density while the gate structure and isolation regions are designed to manage heat distribution, allowing the device to achieve high saturation current without excessive heat generation
3Area of stationary object
If the distance between STIs is decreased to reduce area, then area is reduced, but saturation current decreases due to STI stress
Solution Approach 1:
Element isolation regions are formed in advance to define and separate transistor regions before subsequent processing steps, establishing proper stress conditions and electrical isolation that enable high saturation current while maintaining compact area through optimized spacing
Data Source
AI summary
A semiconductor device includes: element isolation regions; a projecting semiconductor region; a plurality of first gate electrodes each formed on both side surfaces and a top surface of a portion of the projecting semiconductor region, the plurality of first gate electrodes being formed between a pair of opposed end portions of the element isolation regions and being component elements of a plurality of transistors; at least one second gate electrode formed between the first gate electrodes, in the same layer as a layer where the plurality of first gate electrodes are formed, and applied with a voltage for turning off the transistor.