FinFET Gate and Isolation Layout for Short-Channel Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high element integration density and reliability while effectively suppressing short channel effects and improving current control capabilities.
Innovation Solution
The semiconductor device design incorporates fin patterns with specific gate structures and isolation trenches, along with a gate insulating support, to enhance integration density and performance, and includes epitaxial patterns for improved transistor functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate transistor with 3D channel is used, then current control capability is improved, but device complexity increases
Solution Approach 1:
The device is divided into multiple fin patterns (first, second, third, fourth fin patterns) separated by isolation trenches, with each fin pattern having its own gate structure. This segmentation allows independent optimization of each transistor while achieving high integration density through systematic arrangement.
Solution Approach 2:
The patent transitions from planar 2D channel structures to 3D fin-shaped channels that extend vertically from the substrate. Multiple fin patterns are arranged in both first and second directions, creating a three-dimensional transistor layout that improves current control while increasing integration density.
2Productivity
If element integration density is increased, then productivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The high-density transistor array is segmented into groups separated by first and second isolation trenches. Each group contains fin patterns with dedicated gate structures, allowing modular manufacturing where precision requirements are managed at the group level rather than across the entire device.
Solution Approach 2:
Different regions of the device have specialized structures: fin patterns in NMOS regions, fin patterns in PMOS regions, isolation trenches between groups, and gate insulating supports at specific locations. This local differentiation allows optimized manufacturing processes for each region while achieving overall high integration density.
3Reliability
If isolation trenches with gate insulating support are added, then reliability is improved, but device complexity increases
Solution Approach 1:
Gate insulating support structures are introduced as intermediary elements between the gate structures and isolation trenches. These supports provide mechanical stabilization and electrical isolation, improving reliability by preventing gate collapse and reducing parasitic effects without requiring complete redesign of the transistor architecture.
Solution Approach 2:
The gate insulating support structures are formed in advance during the manufacturing process, before final gate structure assembly. This preliminary action ensures proper positioning and stabilization of gate structures over fin patterns, preventing manufacturing defects and improving device reliability.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.