FinFET Gate Isolation Structure Preventing Short-Circuits
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Solution Overview
Problem
Semiconductor devices face challenges in preventing short-circuits between adjacent transistors, which can lead to reduced operating performance and reliability due to the lack of effective isolation between gate electrodes.
Innovation Solution
The implementation of an isolating insulation pattern with a gate insulation support and a device isolation structure formed in the same manufacturing process stage, which includes a stacked structure extending in perpendicular directions to isolate fin-type patterns and gate structures, thereby preventing short-circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate electrodes are placed close together to increase device density, then productivity and device density improve, but the risk of short-circuit between adjacent transistors increases
Solution Approach 1:
An isolating insulation pattern is introduced as an intermediary element between adjacent gate electrodes. This pattern includes a gate insulation support and device isolation structure that physically separates the gate electrodes, preventing short-circuits while allowing them to be positioned close together for high device density.
Solution Approach 2:
The isolation is achieved not only in the planar direction but also in the vertical dimension. The gate insulation support extends downward to isolate gate electrodes at different depths, while the device isolation structure provides additional separation, creating a three-dimensional isolation architecture that enables higher density without compromising reliability.
2Reliability
If isolation structures are added to prevent short-circuits, then reliability improves, but device complexity and manufacturing complexity increase
Solution Approach 1:
The gate insulation support and device isolation structure are merged into a single integrally formed isolating insulation pattern. This unified structure reduces the number of separate components and simplifies the overall device architecture while maintaining effective isolation between adjacent transistors.
Solution Approach 2:
The isolating insulation pattern serves multiple functions simultaneously: it provides gate insulation, device isolation, and structural support. This multi-functionality reduces the need for separate dedicated isolation components, thereby reducing overall device complexity.
3Reliability
If multiple isolation structures are formed at different manufacturing stages, then isolation effectiveness improves, but manufacturing time and process complexity increase
Solution Approach 1:
The gate insulation support is formed in advance during the gate electrode fabrication process, before the device isolation structure is completed. This preliminary action allows the isolation structures to be integrated seamlessly without requiring additional separate manufacturing stages, reducing overall manufacturing cycle time.
Solution Approach 2:
The formation of the gate insulation support and device isolation structure is merged into a single manufacturing process stage. Both structures are formed simultaneously using the same fabrication steps, eliminating the need for separate processing stages and reducing manufacturing complexity and time.
Data Source
AI summary
A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the gate insulation support.