FinFET Gate Line Formation for High Integration Density
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Solution Overview
Problem
Conventional processes for manufacturing fin transistors face challenges in creating high-quality gate electrodes as device feature sizes decrease, leading to defects like voids and increased complexity due to the presence of dielectric spacers in cuts, which affect integration density and manufacturing costs.
Innovation Solution
The method involves forming parallel gate lines without immediate cuts, followed by dielectric spacer formation, and then performing inter-device electrical isolation, ensuring the spacer does not extend into opposing end faces of gate electrodes, allowing for reduced electrical isolation space and improved integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional processes form gate electrodes with immediate cuts, then manufacturing complexity increases due to dielectric spacers in cuts, but integration density is reduced
Solution Approach 1:
The patent applies preliminary action by forming the gate lines as continuous structures before performing any cuts or adding dielectric spacers. This preliminary formation of gate lines simplifies the manufacturing process by avoiding the complexity of managing spacers during cutting operations, while the subsequent selective cutting enables high integration density through precise electrical isolation at predetermined positions.
2Productivity
If device feature sizes are decreased, then integration density is improved, but manufacturing precision deteriorates due to difficulty in making gate electrodes
Solution Approach 1:
The patent applies segmentation by dividing the gate electrode formation process into distinct stages: first forming continuous gate lines, then selectively cutting them at predetermined positions. This segmentation allows each stage to be optimized independently, maintaining high manufacturing precision even as device feature sizes decrease and integration density increases.
3Ease of manufacture
If dielectric spacers are present in cuts, then gate electrode formation is simplified, but defects increase due to voids and spacer material in cuts
Solution Approach 1:
The patent applies the taking out principle by completely removing dielectric spacers from the cutting process. Instead of using spacers to define cut positions, the method forms gate lines first and then performs selective cutting without spacers, thereby eliminating the source of defects such as voids and spacer material remnants while maintaining ease of gate electrode formation.
Data Source
AI summary
A semiconductor device structure, a method for manufacturing the same, and a method for manufacturing a semiconductor fin are disclosed. In one embodiment, the method for manufacturing the semiconductor device structure comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction, the second direction crossing the first direction on the semiconductor substrate, and the gate line intersecting the fin with a gate dielectric layer sandwiched between the gate line and the fin; forming a dielectric spacer surrounding the gate line; and performing inter-device electrical isolation at a predetermined position, wherein isolated portions of the gate line form independent gate electrodes of respective devices.