FinFET Gate Layout for Self-Heating and SCE Control
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Solution Overview
Problem
As semiconductor process nodes shrink, the short-channel effect (SCE) becomes more prevalent due to reduced channel lengths, leading to increased sub-threshold leakage and self-heating issues in MOSFETs, which existing technologies struggle to effectively address.
Innovation Solution
A semiconductor structure and method involving a substrate with a device unit region comprising a first and second sub-unit region, where the second sub-unit region has a second gate spanning the fin, allowing for differential threshold voltages and gate widths to manage heat distribution and reduce self-heating effects by controlling the driving current and heat generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel length is reduced to adapt to scaling-down of process nodes, then the device density and integration are improved, but the short-channel effect increases leading to higher sub-threshold leakage and self-heating
Solution Approach 1:
The patent transitions from planar gate control to three-dimensional gate-all-around control, where the gate wraps around the fin structure from all directions. This dimensional change provides superior electrostatic control over the channel, effectively suppressing short-channel effects and sub-threshold leakage while maintaining scaled dimensions.
Solution Approach 2:
The device is segmented into multiple fins arranged in parallel, with each fin providing an independent current path. This segmentation allows the total current to be distributed across multiple channels, reducing the current density and heat generation in each individual fin while maintaining high overall device density.
2Temperature
If the gate width is increased to reduce self-heating effects, then the heat distribution is improved, but the device area increases
Solution Approach 1:
The gate structure extends vertically to wrap around the fin, providing control from the top, bottom, and sides. This three-dimensional configuration increases the effective gate control area without proportionally increasing the planar footprint, allowing better heat distribution within the vertical dimension while maintaining compact lateral dimensions.
Solution Approach 2:
Different regions of the gate structure are optimized for different functions: the gate material and thickness are tailored to provide appropriate electrical control, while the fin geometry and spacing are optimized for heat dissipation. This local optimization allows simultaneous achievement of electrical performance and thermal management.
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. One form of a semiconductor structure includes: a substrate including a device unit region, where the device unit region includes a first sub-unit region configured to form a first device and a second sub-unit region configured to form a second device, where a driving current of the first device is greater than a driving current of the second device; a fin protruding from the substrate; a first gate spanning the fin in the first sub-unit region; and a second gate spanning the fin in the second sub-unit region. In some implementations, the second sub-unit region is disposed in the device unit region, and the second device generates less heat than the first device. Therefore, compared with a solution in which the device unit region includes only a first device region, overall heat from the device unit region can be reduced, thus ameliorating a self-heating effect in the device unit region and enhancing the performance of semiconductors.