FinFET Gate Stack Strain via Thermal Oxidation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing FinFET devices and fabrication methods have limitations in achieving optimal performance due to complexity and inefficiencies in processing and manufacturing, particularly in inducing sufficient strain for improved device performance.
Innovation Solution
A method for fabricating FinFET devices involves forming semiconductor strips, recessing them to create trenches, depositing semiconductor material layers, forming a gate stack, and using thermal oxidation to induce strain through volume expansion, resulting in a strained channel for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing FinFET fabrication methods are used, then device manufacturing is achieved, but sufficient strain cannot be induced in the channel for optimal performance
Solution Approach 1:
The patent changes the physical-chemical parameters of the semiconductor material by introducing germanium into the silicon crystal lattice. This compositional parameter change induces tensile strain in the channel region, improving carrier mobility and device performance without requiring complex additional processing steps
Solution Approach 2:
The patent applies local quality by creating a strained semiconductor layer with specific germanium concentration in the channel region, while maintaining different material compositions in other regions. The strained layer is localized where needed to induce strain, while other regions maintain their original properties
2Productivity
If scaling down process is applied, then production efficiency increases and costs decrease, but processing complexity increases
Solution Approach 1:
The patent performs preliminary action by forming the strained semiconductor layer during the epitaxial growth process before subsequent fabrication steps. This preliminary incorporation of strain-inducing material simplifies later processing by eliminating the need for separate strain introduction steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively induces sufficient strain in the channel, improving device performance by increasing tensile strain and achieving desired channel characteristics, thereby enhancing the functionality of FinFET devices.
Implementation Method 1
using thermal oxidation to induce strain through volume expansion
Implementation Method 2
induce strain through volume expansion
Data Source
AI summary
An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor region, and a germanium-containing semiconductor layer between and in contact with the silicon fin and one of the silicon oxide regions.