FinFET Fin Geometry and Doping Layout for Channel Control
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to efficiently form FinFET devices with varying dopant concentrations and operational voltages in different regions of a semiconductor substrate, while maintaining precise control over channel dimensions and electrical performance.
Innovation Solution
A method is developed to pattern and form FinFETs with distinct dopant concentrations in different regions, using double-patterning or multi-patterning processes, and subsequent etching and deposition techniques to create fins and gate stacks with tailored dimensions and materials, allowing for differential performance in these regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If double-patterning or multi-patterning processes are used to form FinFETs with distinct dopant concentrations in different regions, then manufacturing precision and device performance control are improved, but device complexity and process difficulty increase
Solution Approach 1:
The semiconductor substrate is divided into multiple regions (first region, second region, third region) with different dopant concentrations and device configurations. Each region is independently patterned and processed to achieve distinct electrical characteristics, allowing precise control of channel dimensions and device performance in each segment while managing overall process complexity through modular fabrication approaches.
Solution Approach 2:
Different regions of the semiconductor substrate are assigned different dopant concentrations (first dopant concentration in first region, second dopant concentration in second region) and different device structures (FinFETs in first and third regions, planar devices in second region) to optimize local electrical properties and device performance for specific applications, thereby improving manufacturing precision through localized optimization.
2Adaptability or versatility
If FinFETs with varying dopant concentrations are fabricated to support diverse applications, then adaptability and device functionality are improved, but manufacturing process complexity increases
Solution Approach 1:
The semiconductor device integrates multiple device types (FinFETs and planar devices) with different dopant concentrations and configurations within a single substrate, enabling the device to support diverse applications including SRAM, CPU, GPU, and ultra-low power operations. This multi-functional approach improves adaptability while the standardized fabrication process across regions helps manage complexity.
Solution Approach 2:
Different regions are optimized for different applications: first region with FinFETs for high-performance applications, second region with planar devices for standard applications, and third region with FinFETs for specialized applications. This localized optimization expands device versatility while maintaining manageable fabrication complexity through region-specific processing protocols.
3Reliability
If gate wrapping structures are implemented to improve electrical control, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The gate structure is implemented as a wrapping configuration around the fin structure in FinFET regions, creating multiple gate-to-channel contact points that improve electrical control and device reliability. The segmented gate wrapping approach around vertically oriented fins enhances control without requiring excessive manufacturing precision by distributing the control function across multiple contact interfaces.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin