FinFET Inner Spacer Structure for Smaller Gate Patterning
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Solution Overview
Problem
The semiconductor industry faces challenges in improving processing and manufacturing efficiency as the complexity of semiconductor integrated circuits (ICs) increases with smaller geometry sizes.
Innovation Solution
The proposed solution involves a detailed sequential process for manufacturing a semiconductor device structure, including the formation of sacrificial semiconductor layers, semiconductor fins, gate electrode layers, and inner spacers, which enhances device density and manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency and cost are improved, but processing complexity increases
Solution Approach 1:
The patent segments the gate electrode formation process by using a sacrificial semiconductor material layer that is selectively removed to define gate regions. This segmentation allows for precise control of gate electrode positions and dimensions, enabling smaller geometry sizes while maintaining manufacturing manageability through modular processing steps
Solution Approach 2:
The sacrificial semiconductor material layer is formed and patterned before the gate electrode layer is deposited. This preliminary action establishes the gate region definitions in advance, allowing subsequent gate electrode formation to proceed with reduced complexity and improved precision at smaller geometries
2Productivity
If device dimensions are reduced to increase device density, then manufacturing efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The sacrificial semiconductor material layer serves as an intermediary that temporarily defines the gate electrode regions. This intermediary layer enables precise gate dimension control through its own precise formation and selective removal, achieving high manufacturing precision at reduced dimensions without directly requiring ultra-precise gate electrode patterning
Solution Approach 2:
The patent replaces direct mechanical patterning of the gate electrode layer with a sacrificial material approach. The gate regions are defined through selective etching of the sacrificial layer rather than direct deposition patterning, substituting a more controllable chemical etching process for mechanical/physical deposition constraints
Data Source
AI summary
A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin including a first surface, a second surface opposite the first surface, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The semiconductor device structure further includes a gate electrode layer disposed adjacent the first, third, and fourth surfaces of the semiconductor fin, a first source/drain epitaxial feature in contact with the semiconductor fin, and a first inner spacer disposed between the first source/drain epitaxial feature and the gate electrode layer. The first inner spacer is in contact with the first source/drain epitaxial feature, and the first inner spacer comprises a first material. The semiconductor device structure further includes a first spacer in contact with the first inner spacer, and the first spacer comprises a second material different from the first material.