FinFET Fin Structure With Integrated Resistor for Noise Reduction
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to integrate transistors and resistors efficiently while minimizing device size and reducing manufacturing costs, while also mitigating transistor noise such as flicker noise.
Innovation Solution
The formation of transistors electrically connected to adjacent resistors using the same processing steps, where resistors are integrated in the same fin as the transistor, such as in a FinFET, and can be passive or variable, with source-degeneration resistors coupled to the transistor to reduce noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If transistors and resistors are integrated in the same fin using the same processing steps, then device size is reduced and manufacturing cost is lowered, but device complexity increases
Solution Approach 1:
The patent merges the formation of transistors and resistors into a single integrated process by forming both devices within the same fin structure using identical processing steps. This includes simultaneous doping, epitaxial growth, and gate formation for both transistor channels and resistor regions, eliminating the need for separate processing sequences and reducing overall device footprint.
Solution Approach 2:
The fin structure serves multiple functions simultaneously: it acts as both the transistor channel region and the resistor region. The same fin material and processing steps create both functional elements, making the fin structure multi-functional. This universal approach allows a single fin to provide both active transistor operation and passive resistance functionality.
2Object-affected harmful factors
If source-degeneration resistors are coupled to the transistor, then transistor noise is reduced, but device size increases
Solution Approach 1:
The source-degeneration resistor is merged with the transistor by forming both within the same fin structure. The resistor is created in a dedicated region of the fin that shares the same doping and epitaxial processing, eliminating the need for separate resistor structures and reducing the overall area required for noise mitigation.
Solution Approach 2:
The patent utilizes the vertical dimension of the fin structure to accommodate both transistor and resistor functions. By forming the source-degeneration resistor in a region that extends from the fin surface, the design exploits the third dimension rather than requiring additional lateral space, thus reducing device footprint while maintaining noise reduction functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces device size, lowers manufacturing costs, and effectively minimizes transistor noise by integrating resistors and transistors in a single fin structure, enhancing the performance and efficiency of semiconductor devices.
Implementation Method 1
implanting the semiconductor fin to form a first conductive channel in the semiconductor fin
Implementation Method 2
forming a first epitaxial region and a second epitaxial region in the semiconductor fin
Data Source
AI summary
A method includes: forming a fin protruding from a substrate; implanting an n-type dopant in the fin to form an n-type channel region; implanting a p-type dopant in the fin to form a p-type channel region adjacent the n-type channel region; forming a first gate structure over the n-type channel region and a second gate structure over the p-type channel region; forming a first epitaxial region in the fin adjacent a first side of the first gate structure; forming a second epitaxial region in the fin adjacent a second side of the first gate structure and adjacent a first side of the second gate structure; and forming a third epitaxial region in the fin adjacent a second side of the second gate structure.