FinFET Interconnect Adhesion Layer Prevents Delamination
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Solution Overview
Problem
Existing interconnect structures in semiconductor devices face challenges in achieving satisfactory performance due to issues such as poor adhesion between conductive features and dielectric layers, leading to delamination and reduced device performance.
Innovation Solution
A dual damascene process is employed to form a trench-via structure with an adhesion layer between the conductive feature and the dielectric layer, which is a discontinuous layer extending on the sidewalls and bottom surfaces of the openings, enhancing adhesion and preventing delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dual damascene process with adhesion layer is used, then adhesion between conductive feature and dielectric layer is improved, but device complexity increases
Solution Approach 1:
An adhesion layer is introduced as an intermediary between the conductive feature and the dielectric layer. This adhesion layer serves as a mediator that enhances the bonding interface and prevents delamination, directly resolving the adhesion problem while maintaining structural integrity.
Solution Approach 2:
The interconnect structure employs composite materials by combining multiple layers including the adhesion layer, conductive feature, and dielectric layer. This composite approach allows each layer to contribute its specific properties, with the adhesion layer providing enhanced bonding capabilities that neither the conductive feature nor dielectric layer could achieve alone.
2Reliability
If adhesion layer is added to prevent delamination, then reliability is improved, but manufacturing process complexity increases
Solution Approach 1:
The adhesion layer is applied in advance, before the conductive feature is formed, as part of the dual damascene process. This preliminary action ensures that the adhesion interface is established before subsequent processing steps, preventing delamination issues that would be difficult to address later in manufacturing.
Solution Approach 2:
The adhesion layer acts as an intermediary that simplifies the overall manufacturing by providing a reliable bonding interface that prevents delamination, reducing the need for additional corrective processes or quality control measures to address adhesion failures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The adhesion layer improves the connection between the conductive feature and the dielectric layer, enhancing the semiconductor device's performance by preventing delamination and ensuring reliable electrical connectivity.
Implementation Method 1
A dual damascene process is employed to form a trench-via structure with an adhesion layer between the conductive feature and the dielectric layer, which is a discontinuous layer extending on the sidewalls and bottom surfaces of the openings, enhancing adhesion and preventing delamination.
Data Source
AI summary
A semiconductor device structure includes a first metal layer formed over a substrate and an interconnect structure formed over the first metal layer. The interconnect structure includes an upper portion, a middle portion and a lower portion, the middle portion is connected between the upper portion and the lower portion. The upper portion and the lower portion each have a constant width, and the middle portion has a tapered width which is gradually tapered from the upper portion to the lower portion.


