FinFET Device Structure With Isolation Layer To Reduce Leakage
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable three-dimensional fin-like field effect transistors (FinFETs) as feature sizes decrease, making fabrication processes increasingly difficult due to the complexity of achieving reliable semiconductor devices with improved performance.
Innovation Solution
The process involves forming recesses in a semiconductor substrate to create fin structures, surrounding them with isolation features, replacing upper fin portions, and forming a gate stack over the fin structures, along with epitaxially growing semiconductor materials to enhance channel regions and source/drain structures, and forming isolation layers to reduce current leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but fabrication process difficulty and device reliability worsen
Solution Approach 1:
The patent transitions from planar device architecture to three-dimensional FinFET structure with vertical fins extending from the substrate. This dimensional change allows the channel to be controlled from multiple sides by the gate, improving device performance while enabling continued scaling without proportionally increasing fabrication complexity
Solution Approach 2:
The channel region is segmented into multiple vertical fin structures rather than a single planar channel. Each fin acts as an independent current path with multi-sided gate control, allowing the device to achieve higher functional density and improved performance while maintaining manufacturability through modular vertical structures
2Productivity
If planar device scaling is pursued to reduce feature size, then functional density increases, but device performance and reliability deteriorate due to short channel effects
Solution Approach 1:
The invention moves from two-dimensional planar scaling to three-dimensional vertical fin structures. The vertical fins provide extended channel length in the vertical dimension while maintaining small lateral feature sizes, thereby increasing functional density without suffering from short channel effects that plague planar scaling
Solution Approach 2:
The patent employs composite material structures including semiconductor fins, dielectric materials for isolation and gate insulation, and metal layers for interconnects. This multi-material approach enables precise control of electrical properties while maintaining structural integrity and reliability in the three-dimensional FinFET architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability and performance of FinFETs by reducing leakage current and enhancing carrier mobility, leading to better device performance and increased production efficiency.
Implementation Method 1
epitaxially growing semiconductor materials to enhance channel regions and source/drain structures
Implementation Method 2
forming isolation layers to reduce current leakage
Data Source
AI summary
Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure and a source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device structure further includes an isolation layer between the source/drain structure and the semiconductor substrate.