FinFET Layer Structure for Higher Current Density Capacity
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Solution Overview
Problem
Existing FinFET devices face challenges in enhancing current density capacity.
Innovation Solution
The method involves forming a FinFET device with specific dopant concentrations and layer structures, including a substrate, drain layer, drift layer, doped-well layer, and insulating layer, using materials like bulk gallium nitride, diamond, silicon carbide, and silicon, to facilitate efficient charge carrier flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If existing FinFET device structures are used, then manufacturing simplicity is maintained, but current density capacity is insufficient
Solution Approach 1:
The device is divided into multiple functional layers including substrate, drain layer, drift layer, doped-well layer, insulating layer, and gate electrode. Each layer is independently formed with specific dopant concentrations and geometries to optimize current density capacity while maintaining manageable manufacturing complexity through systematic segmentation of the device structure.
Solution Approach 2:
Different regions of the device are assigned different dopant concentrations and material compositions. The drain layer has a first dopant concentration, the drift layer has a second dopant concentration, and the doped-well layer has a third dopant concentration. This local differentiation of properties enables optimization of current density in specific regions without uniformly increasing device complexity throughout the entire structure.
2Quantity of substance
If dopant concentrations are increased to enhance current density, then current density capacity improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies different dopant concentrations for different layers: the drain layer comprises a first concentration of first type dopant, the drift layer comprises a second concentration of first type dopant, and the doped-well layer comprises a third concentration of second type dopant. By establishing distinct parameter ranges for each layer, the patent enables optimization of current density capacity while providing clear manufacturing specifications that guide precision control during fabrication processes.
Data Source
AI summary
A FinFET device that may include a substrate. A drain layer on a first side of the substrate. A drift layer on a second side of the substrate. The drift layer having a fin-shaped portion and a recessed portion. A doped-well layer over the fin-shaped portion of the drift layer. An insulating layer over the doped-well layer and over the recessed portion of the drift layer. A gate electrode over the insulating layer.