FinFET Layout With Multi-Fin and Mono-Fin Isolation
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Solution Overview
Problem
Fin-like field effect transistors (FinFETs), particularly multi-fin FETs, face challenges in achieving high switching speed while minimizing power consumption due to higher leakage and increased power consumption compared to single-fin FinFETs.
Innovation Solution
The implementation of multi-fin and mono-fin semiconductor devices with optimized gate structures, source/drain features, and isolation techniques, including the use of high-K metal gate stacks and dielectric materials to enhance performance and reduce leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If multi-fin FETs are used to achieve high switching speed, then switching speed is improved, but power consumption increases due to higher leakage
Solution Approach 1:
The device is segmented into multiple fin regions (first plurality of fins and second plurality of fins) with different characteristics. The first fins provide high switching speed while the second fins provide low leakage, allowing the device to achieve both high performance and low power consumption through spatial segmentation of functional regions.
Solution Approach 2:
Different regions of the device are assigned different local qualities: the first fin region is optimized for high switching speed applications while the second fin region is optimized for low leakage applications. This allows each region to perform its specific function optimally without compromising the other.
2Speed
If multi-fin FETs are used to increase drive current, then switching speed is improved, but leakage current increases
Solution Approach 1:
The device segments the fin structure into two distinct groups: first fins configured for high drive current and high switching speed, and second fins configured for low leakage current. This segmentation allows the device to simultaneously achieve high switching speed and low leakage by distributing different functional requirements to different fin regions.
Solution Approach 2:
Different local qualities are assigned to different fin regions: the first fin region has properties optimized for high switching speed (such as larger width or different doping), while the second fin region has properties optimized for low leakage (such as smaller width or different doping profile).
Data Source
AI summary
Semiconductor devices and semiconductor cell arrays are provided herein. In some examples, a semiconductor device includes a multi-fin active region, a mono-fin active region, and an isolation feature between the multi-fin active region and the mono-fin active region. The multi-fin active region includes a first plurality of fins, a second plurality of fins parallel to the first plurality of fins, a first n-type field effect transistor (FET), and a first p-type FET. The mono-fin active region abuts the multi-fin active region. The mono-fin active region includes a first fin, a second fin different from the first fin, a second n-type FET, and a second p-type FET. The isolation feature is parallel to the first and second gate structures.