FinFET Liner Structure for Oxidation and Fin Bending Control
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Solution Overview
Problem
The semiconductor industry faces challenges in maintaining the integrity and performance of FinFETs due to oxidation and bending issues during the manufacturing process, which affect the integration density and reliability of electronic components.
Innovation Solution
The process involves forming multiple liners and capping layers using specific materials like silicon oxynitride and silicon dioxide, followed by annealing to transform these materials, ensuring reduced oxidation and improved stiffness, thereby preventing fin bending and enhancing gap fill capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple liners and capping layers are formed using specific materials like silicon oxynitride and silicon dioxide, then oxidation resistance and structural stiffness are improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent divides the protective structure into multiple distinct layers (first liner, second liner, capping layer) with different material compositions and functions. Each layer serves a specific purpose: the first liner provides initial oxidation protection, the second liner enhances stiffness, and the capping layer provides final protection. This segmentation allows optimization of each layer's properties independently while collectively solving the oxidation resistance problem.
Solution Approach 2:
The patent employs composite material structures where different dielectric materials (silicon oxynitride, silicon dioxide) are combined in specific sequences. These composite layers provide synergistic effects: silicon oxynitride offers excellent oxidation resistance, while silicon dioxide provides mechanical support and stiffness. The combination achieves superior overall performance compared to single-material structures.
2Strength
If multiple liners and capping layers are formed using specific materials like silicon oxynitride and silicon dioxide, then structural stiffness is improved preventing fin bending, but device complexity and manufacturing steps increase
Solution Approach 1:
The structural support function is segmented across multiple layers: the first liner provides initial structural definition, the second liner (formed after annealing) provides enhanced stiffness, and the capping layer provides final structural protection. This segmentation allows each layer to be optimized for specific mechanical properties while collectively preventing fin bending.
Solution Approach 2:
The patent utilizes parameter changes through thermal annealing to transform the material properties of the first liner into the second liner. The annealing process changes the physical and mechanical parameters of the material, transforming it from a less stiff state to a stiffer state that provides better structural support. This parameter transformation reduces the need for additional thick structural layers.
3Reliability
If the first precursor material is transformed into a second material through annealing, then material properties are optimized for reduced oxidation and improved stiffness, but processing time and energy consumption increase
Solution Approach 1:
The first liner is deposited with specific material composition (silicon oxynitride) that is pre-configured to transform into the desired second material (silicon dioxide) through subsequent annealing. This preliminary action of depositing the correct precursor material ensures that the transformation process will yield the optimal structural and protective properties, avoiding the need for multiple separate deposition and annealing cycles.
4Productivity
If minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but oxidation and bending issues during manufacturing worsen
Solution Approach 1:
The patent applies local quality enhancement by providing targeted protective layers specifically at the fin structures where oxidation and bending are most critical. The liners and capping layers are conformally deposited to ensure uniform protection across all fin structures, regardless of their dimensions. This localized protection allows continued scaling to smaller feature sizes while maintaining structural integrity.
Solution Approach 2:
The composite material structure provides enhanced protection for scaled-down fin structures. The combination of silicon oxynitride and silicon dioxide layers creates a robust protective system that maintains its effectiveness even as fin dimensions are reduced. The different material properties complement each other to prevent both oxidation and mechanical bending in miniaturized structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces oxidation and bending of fins, improving the integration density and reliability of FinFETs by maintaining the structural integrity and performance of semiconductor devices.
Implementation Method 1
annealing to transform these materials, ensuring reduced oxidation and improved stiffness
Implementation Method 2
reduces oxidation and bending of fins, improving the integration density and reliability
Data Source
AI summary
A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.