FinFET Memory Array With Segmented Wordlines
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Solution Overview
Problem
Current finFET devices face challenges in highly integrated memory applications due to limitations in architecture and fabrication methods, particularly in minimizing row-hammer disturbances and optimizing channel region access for improved performance and efficiency.
Innovation Solution
The implementation of a memory array design featuring fins with alternating channel regions and wordline configurations, where first and second wordline components overlap specific channel regions, and conductive shielding lines provide electrical isolation, enabling efficient current flow and reduced noise interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional finFET devices are used in highly integrated memory arrays, then device integration is achieved, but row-hammer disturbances and noise interference increase
Solution Approach 1:
The gate structure is segmented into multiple independent gates (first gate and second gate) that can be independently controlled. This segmentation allows selective activation of specific channel regions, enabling precise control over current flow paths and isolation of adjacent memory cells, thereby reducing row-hammer disturbances while maintaining high integration density
Solution Approach 2:
Different regions of the fin structure are assigned different functional properties through selective gating. The first gate controls current in the first channel region while the second gate controls current in the second channel region, creating locally optimized control that reduces interference between adjacent cells and minimizes row-hammer effects
2Ease of operation
If conventional wordline configurations are used, then simple structure is maintained, but channel region access efficiency is limited
Solution Approach 1:
The wordline configuration transitions from a single-planar structure to a three-dimensional arrangement with horizontal and vertical components. The first wordline component extends horizontally to access first channel regions while the second wordline component is positioned vertically to access second channel regions, enabling efficient multi-directional access without excessive complexity
Solution Approach 2:
The multi-component wordline structure serves multiple functions simultaneously: the first wordline component accesses first channel regions while the second wordline component accesses second channel regions, and both components can be independently controlled to provide selective access patterns, achieving versatile channel region access with unified architecture
Data Source
AI summary
Some embodiments include a memory array having rows of fins. Each fin has at least one channel region. Each channel region extends from a first source/drain region to a second source/drain region. The channel regions within each row of fins include first channel regions and second channel regions. Wordline configurations extend along the rows of fins. Each wordline configuration has a first wordline component operated in tandem with a second wordline component. The first wordline components electrically couple with only the first channel regions and the second wordline components electrically couple with only the second channel regions.