FinFET Metal Gate Structure for Stronger Channel Control
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to effectively control the channel of transistors as their dimensions shrink, requiring advanced configurations like fin field-effect transistors (FinFETs) and gate-all-around (GAA) transistors to manage gate control, but existing methods face limitations in achieving optimal DC and AC current performance.
Innovation Solution
The semiconductor structure incorporates a fin field-effect transistor (FinFET) configuration with a metal gate and dielectric region surrounding a semiconductor fin, allowing for precise control of the channel through a gate-all-around design, utilizing high-k dielectric materials and conductive regions to optimize current flow by varying fin widths and heights, and employing spacers to protect during etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the dimension of the transistor is continuously shrunk, then the integration density is improved, but the gate control ability deteriorates
Solution Approach 1:
The patent transitions from planar transistor structures to non-planar structures such as FinFETs and gate-all-around transistors. This dimensional change allows the gate to wrap around the channel in three dimensions, providing superior gate control over the channel region even as the transistor footprint is reduced, thereby resolving the contradiction between miniaturization and gate control effectiveness.
Solution Approach 2:
The patent employs high-k dielectric materials in combination with metal gates to enhance gate control. The composite structure of high-k dielectric and metal gate materials provides higher capacitance and better electrical control over the channel, maintaining effective gate control despite continuous dimension shrinkage.
2Reliability
If non-planar transistor configurations are used to improve gate control, then the gate control ability is improved, but the device complexity increases
Solution Approach 1:
The patent segments the transistor structure into distinct functional regions including the fin structure, gate regions, source/drain regions, and interlayer dielectric layers. This segmentation allows each component to be optimized independently for its specific function while collectively achieving superior gate control, managing the complexity through modular design.
Solution Approach 2:
By moving to non-planar configurations like FinFETs and gate-all-around structures, the patent achieves three-dimensional gate control that wraps around the channel. This dimensional transition provides enhanced control authority despite the increased structural complexity, as the additional dimensional control compensates for the manufacturing and design challenges.
3Power
If the cross-sectional area of the channel is optimized, then the DC current is enhanced, but the gate control may be compromised
Solution Approach 1:
The patent uses high-k dielectric materials with metal gates to achieve higher gate capacitance, which allows for enhanced DC current through the channel while maintaining strong gate control. The composite material structure provides the necessary electrical properties to simultaneously improve power delivery and control authority.
Solution Approach 2:
The non-planar FinFET and gate-all-around structures provide three-dimensional gate control that effectively manages the channel even as the cross-sectional area is optimized for higher current. The wrapped gate structure ensures that control is maintained across the entire channel perimeter, preventing short-channel effects while allowing larger effective channel area for higher DC current.
Data Source
AI summary
Present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor fin and a metal gate. The semiconductor fin has a first portion and a second portion over the first portion. A height of the second portion is greater than a width of the second portion. The metal gate has a bottom portion, an upper portion, and a lateral portion connecting the bottom portion and the upper portion. The bottom portion is between the first portion and the second portion of the semiconductor fin, and the upper portion is over the second portion of the semiconductor fin.