FinFET Active Region Recessed Area Depth Optimization
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Solution Overview
Problem
Current semiconductor devices, such as FinFET transistors, face challenges in optimizing carrier mobility and performance due to limitations in the design and structure of their active regions and gate structures, particularly in achieving uniformity and efficiency across different transistor areas.
Innovation Solution
The semiconductor device incorporates multiple transistor areas with varying depths and widths of recessed areas and fin protrusions, along with epitaxial semiconductor layers, to enhance carrier mobility and performance by optimizing the distance and height differences between gate structures and semiconductor layers, allowing for improved carrier transport and transistor efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If epitaxial layers are formed at both sides of a channel area to increase carrier mobility, then carrier mobility is improved, but device complexity increases due to additional manufacturing steps and structural variations
Solution Approach 1:
The patent applies local quality by forming epitaxial layers selectively in recessed areas of the active region rather than uniformly across the entire device. The recessed areas are created with specific depths and widths tailored to local requirements, allowing carrier mobility enhancement precisely where needed in the channel area while avoiding unnecessary complexity in other regions. This localized approach improves carrier mobility through controlled epitaxial growth in targeted zones.
Solution Approach 2:
The patent segments the active region into multiple recessed areas with different depths and widths, rather than applying a uniform structure throughout. By dividing the active region into discrete segments (recessed areas) that can be independently configured, the device achieves varied epitaxial layer formation patterns that optimize carrier mobility in different locations without requiring a completely complex uniform structure across the entire device.
2Reliability
If multiple transistor areas with varying depths and widths of recessed areas are implemented, then transistor performance is optimized, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements parameter changes by varying the depths and widths of recessed areas across different transistor areas to optimize performance. By systematically adjusting these geometric parameters (depth, width) in different regions, the device achieves tailored transistor characteristics without requiring extremely tight manufacturing tolerances. The parameter variations are designed to provide performance optimization within achievable manufacturing precision limits.
3Stability of the object's composition
If the distance between gate structures is kept uniform, then device uniformity is maintained, but adaptability to different transistor areas is reduced
Solution Approach 1:
The patent resolves this contradiction by maintaining uniform gate structure spacing (preserving device uniformity) while creating locally varied recessed areas beneath the gates (enabling adaptability). The uniform gate spacing provides structural consistency and predictable electrical characteristics, while the underlying recessed areas with varying depths and widths allow customization for different transistor performance requirements in different regions of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances carrier mobility and transistor performance by optimizing the structural parameters of active regions and gate structures, leading to improved efficiency and density in semiconductor devices.
Implementation Method 1
Carrier mobility in a FinFET transistor may be increased by forming epitaxial layers at both sides of a channel area of the conductive channel
Data Source
AI summary
A semiconductor device includes first and second active regions. Each active region includes a plurality of fin protrusions and a recessed area disposed between the fin protrusions. A plurality of gate structures are disposed on each of the plurality of fin protrusions. A semiconductor layer is disposed in each recessed area. A distance between the gate structures of the first active region is the same as a distance between the gate structures of the second active region, and a height difference between a bottom surface of the semiconductor layer of the first recessed area and a top surface of each of the fin protrusions of the first active region is smaller than a height difference between a bottom surface of the semiconductor layer of the recessed area of the second active region and a top surface of each of the fin protrusions of the second active region.