FinFET Doping and Dielectric Formation in Recessed Semiconductor Structures
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Solution Overview
Problem
Current semiconductor technologies face challenges in increasing device density and performance due to the limitations of traditional planar structures, necessitating the development of three-dimensional multi-gate structures like FinFETs, which require innovative designs for improved electrical control and doping efficiency.
Innovation Solution
A semiconductor structure featuring fin portions with a recessed portion between them, where a doping layer is disposed on the sidewalls and bottom of the recessed area, enhancing doping efficiency and electrical control, and a manufacturing method that includes forming a dielectric layer and conductive layer to optimize the structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a planar device structure is used, then the manufacturing process is simple, but the device density and performance are limited
Solution Approach 1:
The patent transitions from a two-dimensional planar device structure to a three-dimensional FinFET structure with vertically extended fin portions. This dimensional change increases the effective channel area and device density while maintaining manufacturability through established semiconductor processing techniques for forming vertical structures.
Solution Approach 2:
The device structure is segmented into distinct functional regions including fin portions, recessed portions, doping layers, and dielectric layers. This segmentation allows for optimized electrical control in different regions while maintaining overall structural integrity and manufacturability.
2Reliability
If a FinFET structure is adopted to improve electrical control, then device performance increases, but the manufacturing complexity increases
Solution Approach 1:
The patent introduces recessed portions with doping layers at specific locations between the fin portions, creating local variations in doping concentration and electrical properties. This local quality enhancement improves electrical control and device performance without requiring complete restructuring of the entire device.
Solution Approach 2:
The doping layers are nested within the recessed portions, which are themselves located between the fin portions. This nested structure allows for compact integration of multiple functional elements, improving electrical control while minimizing the overall device footprint and manufacturing complexity.
3Manufacturing precision
If doping layers are added in recessed portions to enhance doping efficiency, then electrical control improves, but the manufacturing process becomes more complex
Solution Approach 1:
The recessed portions are formed prior to the doping process, creating pre-defined regions that guide subsequent doping layer formation. This preliminary structuring ensures precise doping placement and efficient dopant distribution, improving manufacturing precision while using standard sequential processing steps.
Solution Approach 2:
The recessed portions act as intermediary structures that facilitate controlled doping between the fin portions. These recessed regions with doping layers serve as mediating elements that enhance doping efficiency and electrical control without requiring direct modification of the fin portions themselves, simplifying the overall manufacturing approach.
Data Source
AI summary
Provided is a manufacturing method of s semiconductor structure. The method includes: providing a substrate, wherein the substrate has a plurality of fin portions and at least one recessed portion, the at least one recessed portion is located between two adjacent fin portions of the plurality of fin portions and a bottom surface of the at least one recessed portion is lower than a surface of the substrate between the two of the plurality of fin portions; forming a doping layer on a sidewall of the plurality of fin portions, the surface of the substrate, and a sidewall and a bottom portion of the at least one recessed portion; and forming a dielectric layer on the doping layer. A top surface of the doping layer and a top surface of the dielectric layer are lower than a top surface of each of the plurality of fin portions.