FinFET Fin Structure with Region-Specific Critical Dimensions
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Solution Overview
Problem
Current semiconductor fabrication processes for FinFET devices cannot simultaneously satisfy the demand for greater critical dimension in core regions for increased channel volume and smaller critical dimension in input/output regions for improved short channel effect.
Innovation Solution
A method is developed to fabricate semiconductor devices by forming fin-shaped structures on a substrate with different critical dimensions for core and input/output regions, where the critical dimension of the fin-shaped structure on the core region is enlarged through an epitaxial growth process while maintaining the critical dimension on the input/output region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the critical dimension of fin-shaped structures is increased in core region, then channel volume is increased, but short channel effect control deteriorates
Solution Approach 1:
The patent applies local quality by forming fin-shaped structures with different critical dimensions in different regions: larger critical dimension in core region for increased channel volume, and smaller critical dimension in input/output region for improved short channel effect control. This is achieved through selective etching processes that modify fin dimensions locally based on regional requirements.
2Reliability
If the critical dimension of fin-shaped structures is decreased in input/output region, then short channel effect is improved, but channel volume is reduced
Solution Approach 1:
The patent implements local quality by creating spatially varying fin dimensions where input/output regions have smaller critical dimensions for optimal short channel effect control, while core regions maintain larger critical dimensions for sufficient channel volume. This regional differentiation resolves the contradiction by optimizing each region for its specific functional requirements.
3Ease of manufacture
If uniform critical dimension is used for all fin-shaped structures, then manufacturing process is simplified, but performance requirements of different regions cannot be satisfied
Solution Approach 1:
The patent resolves the contradiction between manufacturing simplicity and regional performance optimization by implementing local quality through selective modification processes. While the initial fin formation uses uniform processes, subsequent selective etching or growth processes create region-specific dimension adjustments, achieving both manufacturing feasibility and performance optimization.
Solution Approach 2:
The patent applies segmentation by dividing the semiconductor device into distinct functional regions (core region and input/output region) with different fin dimension requirements. This segmentation allows independent optimization of each region's fin structures to meet specific performance targets while maintaining a systematic fabrication approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for increased channel width on the core region while maintaining the critical dimension on the input/output region, effectively addressing the conflicting demands of both regions and enhancing the overall performance of the semiconductor device.
Implementation Method 1
the critical dimension of the fin-shaped structure on the core region is enlarged through an epitaxial growth process
Data Source
AI summary
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.