FinFET Resonator Layout for Multi-Frequency CMOS Integration
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Solution Overview
Problem
The semiconductor industry faces challenges in integrating high-density electronic components while maintaining efficient frequency generation and simplifying manufacturing processes, particularly in CMOS process flows.
Innovation Solution
A FinFET structure is developed using a fin material and pitch to generate multiple frequencies, integrated into CMOS process flows without requiring special packaging, and utilizing a gate-last or gate-first process for device formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional frequency generation methods are used, then frequency sources can be generated, but integration density is reduced and manufacturing complexity increases
Solution Approach 1:
The patent merges the frequency generation function with existing FinFET structures by forming resonators using the same fin materials and fabrication processes. The resonators are integrated alongside transistor fins using identical epitaxial growth and patterning steps, eliminating separate frequency generation components and reducing overall device complexity while maintaining high integration density
Solution Approach 2:
The FinFET structure serves dual purposes: acting as both the transistor channel and the resonator for frequency generation. The same fin structures that provide transistor functionality also serve as the resonating elements, allowing a single structure to perform multiple functions and thereby increasing integration density without adding manufacturing complexity
2Adaptability or versatility
If multiple frequency sources are integrated, then frequency generation capability is improved, but device complexity and packaging requirements increase
Solution Approach 1:
The patent segments the substrate into multiple regions, each containing FinFET structures with different fin pitch values. By varying the fin pitch in different regions, multiple resonant frequencies are generated simultaneously across the device array. This segmentation approach enables multiple frequency sources without requiring separate packaged components, as each region independently generates its designated frequency
Solution Approach 2:
The patent changes the physical parameter of fin pitch to generate different frequencies from identical FinFET structures. By adjusting the spacing between fins in different regions, the resonant frequency of each region is tuned independently. This parameter variation allows a single device to generate multiple frequencies without increasing packaging complexity, as all frequency sources are integrated in one substrate
Data Source
AI summary
An embodiment includes a semiconductor device, a plurality of fin structures extending from a substrate, the plurality of fin structures having a plurality of first fin structures and a plurality of second fin structures. The semiconductor device also includes a plurality of isolation regions on the substrate and disposed between the plurality of fin structures. The device also includes a plurality of gate structures on the plurality of isolation regions. The device also includes a plurality of epitaxy structures on one of the plurality of first fin structures. The device also includes a plurality of contact structures on the plurality of epitaxy structures, where the plurality of first fin structures, the plurality of gate structures, the plurality of epitaxy structures, and the plurality of contact structures are components of one or more resonators.