FinFET Segmented Isolation for Drain-Source Breakdown Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional FinFET devices face limitations in achieving high drain-to-source breakdown voltage, which restricts their performance and scalability in advanced semiconductor integrated circuits.
Innovation Solution
The introduction of a second isolation structure embedded in the fin structures of FinFET devices, along with specific doping regions and fabrication processes, enhances the breakdown voltage by creating non-overlapping regions for drain and source contacts, allowing for a more efficient gate structure and improved electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional FinFET device structure is used, then device size is reduced and current capacity is increased, but drain-to-source breakdown voltage is limited
Solution Approach 1:
The fin structure is divided into multiple segments with different doping types along the channel length. Specifically, the fin is segmented into first, second, and third portions with alternating doping types (e.g., N-type, P-type, N-type), creating distinct regions that can be independently optimized for different functions including current conduction and breakdown voltage enhancement
Solution Approach 2:
Different regions of the FinFET device are assigned different doping types and characteristics to optimize local performance. The source and drain regions have different doping types from the channel, and the fin is further segmented into regions with alternating doping types, allowing each local region to contribute specifically to either current capacity or breakdown voltage
2Area of moving object
If FinFET with greater surface area is used, then channel and source/drain regions are improved, but short channel effects and breakdown voltage limitations persist
Solution Approach 1:
The fin structure is divided into multiple segments with different doping types along the channel length. Specifically, the fin is segmented into first, second, and third portions with alternating doping types (e.g., N-type, P-type, N-type), creating distinct regions that can be independently optimized for different functions including current conduction and breakdown voltage enhancement
Solution Approach 2:
The doping type parameter is changed along the channel length by creating alternating N-type and P-type regions within the fin structure. This parameter variation allows the device to maintain high surface area for current conduction while introducing regions that enhance breakdown voltage through localized electrical field modulation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases the drain-to-source breakdown voltage of FinFET devices from around 1.8 V to 10 V, improving their performance and reliability in complex circuit applications.
Implementation Method 1
a first doped region at least partially embedded in an upper portion of the fin structure. The first doped region has a first type doping different from that of the fin structure
Data Source
AI summary
A transistor includes a substrate having an upper surface, a fin structure protruding from the upper surface of the substrate, an isolation structure over the upper surface of the substrate and surrounding a lower portion of the fin structure, and a first doped region at least partially embedded in an upper portion of the fin structure. The fin structure extends along a first direction. The first doped region has a first type doping different from that of the fin structure.