FinFET Width Control via Selective Buffer Layers
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Solution Overview
Problem
Current FinFET fabrication methods face challenges with current leakage and performance issues due to bottlenecks in the design of fin-shaped structures, which affect the overall performance of semiconductor devices.
Innovation Solution
A method involving the formation of fin-shaped structures with different widths through a process that includes forming buffer layers and using an ultraviolet curing process to alter the widths of the structures, while maintaining the structural rigidity and integrity of the semiconductor device, allowing for improved control over the channel region and reduced leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional FinFET fabrication process is used, then the manufacturing process is simple, but current leakage occurs and device performance deteriorates
Solution Approach 1:
The patent applies local quality by forming buffer layers selectively on specific fin-shaped structures (first fin-shaped structures) while leaving other fin-shaped structures (second fin-shaped structures) without buffer layers. This allows different regions of the device to have different properties - fins with buffer layers have improved performance and reduced leakage, while fins without buffer layers maintain simpler characteristics. The selective application of buffer layers resolves the contradiction by providing enhanced reliability only where needed rather than uniformly across all structures.
Solution Approach 2:
The patent segments the fin-shaped structures into two distinct groups: first fin-shaped structures that receive buffer layers and second fin-shaped structures that do not. This segmentation allows independent optimization of different portions of the device - the first fins can be engineered for high performance applications while the second fins can be optimized for other characteristics, thereby improving overall device reliability without requiring complete process redesign.
2Manufacturing precision
If fin-shaped structures with different widths are formed, then channel region control is improved, but manufacturing precision requirements increase
Solution Approach 1:
The buffer layer acts as an intermediary element that enables precise width control of fin-shaped structures. By depositing buffer layers of controlled thickness on selected fins, the effective width of those fins can be precisely adjusted without requiring direct patterning of each fin to different dimensions. This intermediary layer simplifies the manufacturing process compared to directly creating different fin widths through multiple patterning steps, while still achieving the desired channel region control.
Solution Approach 2:
The patent utilizes parameter changes by varying the thickness of buffer layers deposited on different fin-shaped structures. By controlling the buffer layer thickness parameter, the effective width of fins can be precisely tuned. This approach transforms the manufacturing challenge from directly patterning fins of different widths to simply controlling deposition parameters, thereby improving ease of manufacture while maintaining high manufacturing precision for channel control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces current leakage and enhances the performance of semiconductor devices by allowing for precise control over the channel region and threshold voltage, improving the fabrication process of fin-shaped structures.
Implementation Method 1
performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure
Data Source
AI summary
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure; removing the first buffer layer on the first region; and performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.