FinFET Sensor Fabrication via Silicon Oxidation
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Solution Overview
Problem
Current FET sensors, particularly SiNWs, face challenges in mass production and integration with CMOS ICs, with issues related to stability, reliability, and scaling compatibility, limiting their effectiveness in chemical and biological detection.
Innovation Solution
The development of FinFET sensors with a fully depleted, vertically oriented architecture surrounded by a metal gate, which provides enhanced stability and signal-to-noise ratio, and is fabricated using a method involving bulk silicon substrates, spacer layers, and oxidation processes to create high-quality Fin structures with specific thickness ratios, enabling direct integration with CMOS read-out electronics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If SiNW FET sensors are used for chemical and biological detection, then sensitivity and real-time detection capability are improved, but mass production and integration with CMOS ICs become difficult
Solution Approach 1:
The patent copies the successful FinFET transistor architecture from CMOS technology and adapts it for sensing applications. By using the same fabrication processes and material systems already established in the CMOS industry, the sensor structure can be mass-produced using existing manufacturing infrastructure, thereby resolving the contradiction between detection sensitivity and ease of manufacture
Solution Approach 2:
The FinFET structure serves dual purposes: it functions as both a high-performance transistor for CMOS logic circuits and as a sensitive sensor for chemical and biological detection. This multi-functionality allows the same structure to be used for both computation and sensing, enabling seamless integration and mass production through standard CMOS processes
2Reliability
If FinFET architecture is adopted for sensor applications, then stability and signal-to-noise ratio are improved, but fabrication complexity increases
Solution Approach 1:
The patent merges the FinFET transistor fabrication process with the sensor fabrication process into a single unified flow. By combining these processes, the patent achieves the high stability and signal-to-noise ratio of FinFET architecture while avoiding the need for separate, complex fabrication steps, thereby reducing overall fabrication complexity
3Ease of manufacture
If conventional ISFET structures are used, then ease of manufacture is maintained, but long-term stability and reliability deteriorate
Solution Approach 1:
The patent changes the geometric parameters of the FET structure by transitioning from a planar channel to a vertical FinFET architecture. This parameter change fundamentally improves the channel control and depletron confinement, leading to enhanced long-term stability and reliability while maintaining compatibility with standard fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The FinFET sensors demonstrate improved long-term stability, enhanced sensitivity, and compatibility with CMOS scaling, offering better real-time detection and reduced manufacturing costs, with the ability to detect pH and other chemical species with high specificity and sensitivity.
Implementation Method 1
carrying out oxidation of the silicon surrounding the at least one Fin structure to produce a Fin structure of silicon inside the at least one Fin structure
Data Source
AI summary
The present invention relates to a method of producing a FinFET sensor device comprising the steps of:providing a silicon substrate;etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surface of the silicon substrate;depositing a spacer layer on the at least one Fin structure;anisotropically etching a section of the spacer layer to expose the underlying silicon;isotropic etching of the exposed silicon surrounding the at least one Fin structure; andcarrying out oxidation of the silicon surrounding the at least one Fin structure to produce a Fin structure of silicon inside the at least one Fin structure.The present invention also relates to FinFET sensor devices produced by the above method.