FinFET Source/Drain Insulator Structure for Leakage and Capacitance
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, issues such as increased leakage current and capacitance arise, affecting the performance and integration density of FinFETs, necessitating improvements in the source/drain regions.
Innovation Solution
Incorporating an insulator layer at the bottom of the source/drain regions in FinFETs to reduce leakage current and capacitance, which includes forming an air gap between the insulator layer and the epitaxial material, thereby enhancing device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but leakage current and capacitance increase
Solution Approach 1:
The source/drain region is segmented into multiple portions along the channel length, with insulator layers inserted between adjacent source/drain regions. This segmentation creates electrical isolation that reduces leakage current while maintaining high integration density through continued miniaturization of device features.
Solution Approach 2:
Insulator layers are introduced as intermediary structures between adjacent source/drain regions. These insulator layers act as mediators that electrically isolate neighboring regions, preventing charge leakage and reducing parasitic capacitance, thereby enabling continued scaling without compromising device performance.
2Productivity
If the minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but capacitance increases
Solution Approach 1:
The source/drain region is segmented into multiple portions along the channel length, with insulator layers inserted between adjacent source/drain regions. This segmentation creates electrical isolation that reduces leakage current while maintaining high integration density through continued miniaturization of device features.
Solution Approach 2:
Insulator layers are introduced as intermediary structures between adjacent source/drain regions. These insulator layers act as mediators that electrically isolate neighboring regions, preventing charge leakage and reducing parasitic capacitance, thereby enabling continued scaling without compromising device performance.
3Ease of manufacture
If conventional source/drain regions are used without insulator layers, then manufacturing is simpler, but leakage current and capacitance increase affecting device performance
Solution Approach 1:
The source/drain region is segmented into multiple portions along the channel length, with insulator layers inserted between adjacent source/drain regions. This segmentation creates electrical isolation that reduces leakage current while maintaining high integration density through continued miniaturization of device features.
Solution Approach 2:
Insulator layers are introduced as intermediary structures between adjacent source/drain regions. These insulator layers act as mediators that electrically isolate neighboring regions, preventing charge leakage and reducing parasitic capacitance, thereby enabling continued scaling without compromising device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The inclusion of an insulator layer at the bottom of the source/drain regions reduces leakage current and capacitance, leading to improved device speed and reliability.
Implementation Method 1
Incorporating an insulator layer at the bottom of the source/drain regions in FinFETs to reduce leakage current
Implementation Method 2
forming an air gap between the insulator layer and the epitaxial material, thereby enhancing device performance
Data Source
AI summary
An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, and a first source/drain region in the first fin and adjacent the first gate spacer. The first source/drain region including a first insulator layer on the first fin, and a first epitaxial layer on the first insulator layer.