FinFET Testkey Structure for Defect Detection
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Solution Overview
Problem
The miniaturization of FinFETs poses challenges in measuring resistance values due to the need for additional components, which occupy space and disrupt the original design of consumer electronic products, necessitating a novel solution to detect device or connection defects effectively.
Innovation Solution
A testkey structure comprising a fin structure, gate structures, source and drain regions, and a method to measure currents through transistors, allowing for the identification of device or connection defects by comparing measured currents, facilitating easy integration and array design for efficient defect evaluation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If additional components are added to measure resistance values of miniaturized FinFETs, then measurement capability is improved, but device space is consumed and original design is disrupted
Solution Approach 1:
The testkey structure merges the measurement function with the existing FinFET device structure by using the same fin, gate, source, and drain regions for both device operation and resistance measurement. This integration eliminates the need for separate measurement components, thereby improving measurement capability without consuming additional device space or disrupting the original design.
2Measurement precision
If traditional measurement methods are used for miniaturized FinFETs, then measurement can be performed, but device complexity increases and manufacturing becomes more difficult
Solution Approach 1:
The testkey structure enables the FinFET device to measure its own resistance characteristics using its intrinsic components (fin, gate, source, drain regions). By making the device self-measuring, the patent eliminates the need for external measurement equipment and complex test structures, thereby reducing device complexity while maintaining defect detection accuracy.
3Reliability
If conventional test structures are implemented, then defect detection is possible, but manufacturing integration becomes complex and time-consuming
Solution Approach 1:
The testkey structure is segmented into functional regions (first FinFET, second FinFET, third FinFET with different channel lengths) that can be independently formed during standard FinFET manufacturing processes. This segmentation allows defect detection capability to be built into the device structure itself without requiring separate manufacturing steps, thereby improving ease of manufacture while maintaining reliability.
Data Source
AI summary
A testkey structure including the following components is provided. A fin structure is disposed on a substrate and stretches along a first direction. A first gate structure and a second gate structure are disposed on the fin structure and stretch along a second direction. A first common source region is disposed in the fin structure between the first gate structure and the second gate structure. A first drain region is disposed in the fin structure at a side of the first gate structure opposite to the first common source region. A second drain region disposed in the fin structure at a side of the second gate structure opposite to the first common source region. A testkey structure is symmetrical along a horizontal line crossing the first common source region. The present invention further provides a method of measuring device defect or connection defect by using the same.