FinFET Structure with Variable Channel Lengths

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Solution Overview

Problem

Conventional FinFET structures have uniform channel lengths, limiting the ability to differentiate current flow along the sidewalls and tops of fins, which restricts their performance in miniaturized semiconductor devices.

Innovation Solution

The FinFET structure and manufacturing method allow for fins with varying channel lengths by forming fins with different channel lengths and widths, achieved through the use of blocking dams and trimming processes to define channel regions, enabling adjustable channel lengths and widths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional FinFET structures use uniform channel lengths for all fins, then manufacturing is simpler, but the ability to differentiate current flow along sidewalls and tops of fins is limited

Engineering Contradiction:

Improveability to differentiate current flowVSAvoidfin structure complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The fin structure is segmented into different channel length regions by introducing blocking dams at different positions along the fin length. This allows different portions of the fin to have different channel lengths, enabling differentiated current flow control while maintaining a systematic manufacturing approach

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different channel lengths are implemented in different local regions of the fin structure. By placing blocking dams at specific positions, the patent creates local variations in channel length to optimize current flow in different areas of the device

Inventive Principle:

Principle #3Local quality

2Adaptability or versatility

If fins are formed with different channel lengths using blocking dams and trimming processes, then adjustable channel lengths and widths are achieved, but manufacturing complexity increases

Engineering Contradiction:

Improveadjustable channel lengths and widthsVSAvoidmanufacturing process simplicity

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

Blocking dams are formed in advance at predetermined positions before the final fin structure is completed. This preliminary placement of blocking dams allows subsequent trimming processes to accurately define the desired channel lengths and widths, making the adjustable geometry achievable through a systematic multi-step process

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS11488868B2FinFET structure having different channel lengths

Publication Date: 2022.11.01 NAN YA TECH

AI summary

The present disclosure relates to a FinFET structure and a method of manufacturing the same. The FinFET structure includes a first fin and a second fin. The first fin is over a first base and has a first channel region. The first channel region has a first channel length. The second fin is over a second base and has a second channel region. The second channel region has a second channel length. The second channel length is different from the first channel length.