Finlike Structures Oxidation Dry Etch Damage Removal
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Solution Overview
Problem
The formation of fin structures in semiconductor devices often results in structural damage due to processing steps, leading to defects such as dislocations and increased leakage current, which affect device performance.
Innovation Solution
An etch back methodology involving an oxidizing treatment followed by a dry etch process is used to recess and planarize the oxide regions, simultaneously removing damaged regions from the fin surfaces, thereby improving surface integrity and reducing performance-degrading defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If processing steps are used to form fin structures, then fin structures are formed, but structural damage and defects occur
Solution Approach 1:
The patent applies preliminary action by performing an oxidizing treatment on the fin surface before the dry etch process. This oxidation step creates a modified surface layer that facilitates subsequent etching while protecting the underlying crystal structure from direct mechanical damage during processing.
Solution Approach 2:
The patent uses oxidation as an intermediary process between the fin formation and the final etch back. The oxidized surface acts as a mediator that enables controlled material removal through dry etching while minimizing direct mechanical stress on the crystal structure, thus reducing dislocation and damage.
2Manufacturing precision
If etch back process is used to remove damaged regions, then surface integrity is improved, but processing complexity increases
Solution Approach 1:
The patent merges two functions into a single integrated process sequence: the oxidizing treatment and the dry etch process are combined to simultaneously achieve surface modification and material removal. This combination eliminates the need for separate damage removal steps, reducing overall processing complexity while maintaining high manufacturing precision.
Solution Approach 2:
The patent utilizes parameter changes by controlling the oxidation conditions (temperature, time, atmosphere) and etch parameters (plasma power, gas flow, duration) to precisely control the depth and uniformity of material removal. This allows selective elimination of damaged surface regions while preserving the integrity of the underlying crystal structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etch back process effectively removes damaged regions, resulting in more planar and intact fin surfaces, which enhances device performance by reducing leakage current and stabilizing the threshold voltage.
Implementation Method 1
An etch back methodology involving an oxidizing treatment followed by a dry etch process is used to recess and planarize the oxide regions, simultaneously removing damaged regions from the fin surfaces
Implementation Method 2
An etch back methodology involving an oxidizing treatment followed by a dry etch process is used to recess and planarize the oxide regions
Data Source
AI summary
Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.