FinFET Source/Drain Epitaxy Growth for Dense Zone Merging Prevention
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Solution Overview
Problem
The increased complexity in IC manufacturing due to scaling down of device feature size in FinFET devices, particularly in dense zones where merging of adjacent epitaxy structures for source/drain regions is unwanted, necessitates a self-align epi growth methodology to maintain device performance and efficiency.
Innovation Solution
A method involving self-align epi growth for forming source/drain regions in FinFET devices, where epitaxy structures are grown in recesses and trenches, allowing for strained channel formation and controlled doping to enhance carrier mobility, and differentiated shapes based on doping type to prevent merging in dense zones.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional epi growth methodology is used in dense zones, then manufacturing process is simpler, but adjacent epitaxy structures merge causing device performance degradation
Solution Approach 1:
The patent segments the epi growth process into distinct phases: forming separate recesses for each FinFET device, growing epitaxy structures within individual recesses, and using trench isolation to prevent merging. This segmentation ensures precise control over epitaxy structure formation in dense zones while maintaining manufacturability through systematic process division.
Solution Approach 2:
The patent applies preliminary action by pre-forming isolation trenches and defining recess boundaries before initiating epitaxy growth. This preliminary structuring creates self-aligning features that guide subsequent epi growth, ensuring adjacent structures remain separated without requiring complex real-time control during the growth process itself.
2Productivity
If device feature size is scaled down to increase functional density, then production efficiency and device performance improve, but manufacturing process complexity increases
Solution Approach 1:
The patent applies local quality by implementing different epi growth conditions for dense zones versus less-dense zones. In dense zones, self-align methodology with isolated recesses prevents merging, while in less-dense zones, conventional merged epi growth is permitted. This localized approach optimizes device performance in high-density areas without unnecessarily complicating the entire manufacturing process.
Solution Approach 2:
The patent utilizes parameter changes by adjusting epi growth parameters (such as temperature, pressure, and precursor flow rates) to control the formation and merging behavior of epitaxy structures. These parameter modifications enable precise control over whether adjacent structures merge or remain separate, allowing optimization for different zone densities within the same wafer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise formation of source/drain regions, maintaining device performance and efficiency by preventing unwanted merging of epitaxy structures in dense zones, while allowing for enhanced carrier mobility and controlled device size, thus addressing the complexity challenges in scaled-down FinFET manufacturing.
Implementation Method 1
self-align epi growth for forming source/drain regions in FinFET devices, where epitaxy structures are grown in recesses and trenches
Implementation Method 2
allowing for strained channel formation and controlled doping to enhance carrier mobility
Data Source
AI summary
A semiconductor component includes a substrate having a dense zone and a less-dense zone, at least one first FinFET device disposed on the dense zone, and at least one second FinFET device disposed on the less-dense zone, in which a width of a first source/drain region of the first FinFET device is smaller than a width of a second source/drain region of the second FinFET device.